Analysis and approach of TSV-based hierarchical power distribution networks for estimating 1st-Droop and resonant noise in 3DIC

G. Charles, P. Franzon, Jaemin Kim, Alex Levin
{"title":"Analysis and approach of TSV-based hierarchical power distribution networks for estimating 1st-Droop and resonant noise in 3DIC","authors":"G. Charles, P. Franzon, Jaemin Kim, Alex Levin","doi":"10.1109/EPEPS.2011.6100243","DOIUrl":null,"url":null,"abstract":"In this paper, we model and analyse a hierarchical TSV-based chip-package co-design of the power delivery network (PDN) for three-dimensional integrated circuits (3DICs). It is a significant design consideration to combine chip/package PDN structures, accurately characterize and quantify their overall impedance, 1st-droop effect and resonant noise behaviour for multi-stacked chips. To better understand how to reduce noise, particularly simultaneous switching noise (SSN) and determine voltage drop impact on power delivery networks for 3DICs, an analytical model is enhanced and applied to estimate the different noise levels of hierarchical TSV-based PDN structures. The on-chip parasitic capacitances and intentionally added decoupling capacitors help counter any Ldi/dt variations from the power supply rails as a result of the inductive effects in TSVs. With technology interest in embedded applications, the hierarchical chip-package TSV-based PDN design is modeled after a multi-stacked memory subsystem, a silicon interposer and package structure. A segmentation-based method is used to calculate the overall impedance of the hierarchical PDN system. An analytical expression is modified and used to quantify the transient response characteristics of 1st-droop and resonant noise property.","PeriodicalId":313560,"journal":{"name":"2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems","volume":"228 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPS.2011.6100243","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In this paper, we model and analyse a hierarchical TSV-based chip-package co-design of the power delivery network (PDN) for three-dimensional integrated circuits (3DICs). It is a significant design consideration to combine chip/package PDN structures, accurately characterize and quantify their overall impedance, 1st-droop effect and resonant noise behaviour for multi-stacked chips. To better understand how to reduce noise, particularly simultaneous switching noise (SSN) and determine voltage drop impact on power delivery networks for 3DICs, an analytical model is enhanced and applied to estimate the different noise levels of hierarchical TSV-based PDN structures. The on-chip parasitic capacitances and intentionally added decoupling capacitors help counter any Ldi/dt variations from the power supply rails as a result of the inductive effects in TSVs. With technology interest in embedded applications, the hierarchical chip-package TSV-based PDN design is modeled after a multi-stacked memory subsystem, a silicon interposer and package structure. A segmentation-based method is used to calculate the overall impedance of the hierarchical PDN system. An analytical expression is modified and used to quantify the transient response characteristics of 1st-droop and resonant noise property.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于tsv的分层配电网络一阶下垂和谐振噪声估计分析与方法
在本文中,我们建模和分析了一种基于分层tsv的三维集成电路(3dic)供电网络(PDN)的芯片封装协同设计。结合芯片/封装PDN结构,准确表征和量化其整体阻抗、一阶下垂效应和多堆叠芯片的谐振噪声行为是一个重要的设计考虑因素。为了更好地了解如何降低噪声,特别是同时开关噪声(SSN),并确定压降对3dic输电网络的影响,本文改进了一个分析模型,并应用于估计基于tsv的分层PDN结构的不同噪声水平。片上寄生电容和有意添加的去耦电容有助于抵消tsv中电感效应导致的电源导轨的任何Ldi/dt变化。基于嵌入式应用的技术兴趣,基于tsv的分层芯片封装PDN设计采用多堆叠存储子系统、硅中间层和封装结构为模型。采用基于分段的方法计算分层PDN系统的总阻抗。对解析式进行了改进,并用于量化一阶下垂的瞬态响应特性和谐振噪声特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Simulations of pulse signals with X-parameters Extraction of jitter parameters from BER measurements Full-wave PEEC time domain solver based on leapfrog scheme Bended differential transmission line using short-circuited coupled line for common-mode noise suppression Deriving voltage tolerance specification for processor circuit design
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1