J. El Beyrouthy, B. Sagnes, F. Pascal, M. Elsherif, J. Boch, T. Maraine, S. Haendler, P. Chevalier, D. Gloria
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引用次数: 0
Abstract
Gamma irradiation effects are investigated on Si/SiGe:C HBTs developed with the latest BiCMOS technologies. Unbiased HBTs are irradiated with a Co60source until in a Total Ionizing Dose of 330 krad. Irradiation effects are evaluated by measuring the excess base current from DC characteristics (Gummel plot) and the base current spectral density from Low Frequency Noise measurements, mainly by analyzing the 1/f noise level. Degradation comparison on two advanced BiCMOS technologies is done. The recent generation of the technology presents the highest robustness. Moreover, a comparison of the degradation induced by the Gamma source with an earlier study using an X-ray source is held.
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