Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857727
Pablo Bodmann, G. Papadimitriou, D. Gizopoulos, P. Rech
We compare and correlate neutron beam and micro-architectural fault-injection data on ARM Cortex-AS and Cortex-A9 running codes bare-metal and on top of Linux. Cores integration exacerbates crashes while Linux does not significantly impact SDCs rate.
{"title":"Impact of Cores Integration and Operating System on ARM Processors Reliability: Micro-Architectural Fault-Injection vs Beam Experiments","authors":"Pablo Bodmann, G. Papadimitriou, D. Gizopoulos, P. Rech","doi":"10.1109/RADECS50773.2020.9857727","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857727","url":null,"abstract":"We compare and correlate neutron beam and micro-architectural fault-injection data on ARM Cortex-AS and Cortex-A9 running codes bare-metal and on top of Linux. Cores integration exacerbates crashes while Linux does not significantly impact SDCs rate.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123083800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/radecs50773.2020.9857703
{"title":"RADECS 2020 Conference Committee","authors":"","doi":"10.1109/radecs50773.2020.9857703","DOIUrl":"https://doi.org/10.1109/radecs50773.2020.9857703","url":null,"abstract":"","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125018686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857717
G. Bricas, G. Tsiligiannis, A. Touboul, J. Boch, M. Kastriotou, C. Cazzaniga
This paper introduces novel benchmarking structures for the evaluation of the radiation sensitivity of FPGAs, based on arithmetic operations. Atmospheric neutron beam testing results are presented demonstrating the radiation sensitivity of different implementations.
{"title":"Novel FPGA Radiation Benchmarking Structures","authors":"G. Bricas, G. Tsiligiannis, A. Touboul, J. Boch, M. Kastriotou, C. Cazzaniga","doi":"10.1109/RADECS50773.2020.9857717","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857717","url":null,"abstract":"This paper introduces novel benchmarking structures for the evaluation of the radiation sensitivity of FPGAs, based on arithmetic operations. Atmospheric neutron beam testing results are presented demonstrating the radiation sensitivity of different implementations.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116082427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857690
M. Mauguet, J. Guillermin, B. Vandevelde, N. Chatry, J. Carron, F. Bezerra
In this work, we investigate events on power consumption in a Magnetic RAM using heavy ion microbeam and pulsed laser. This study was initially motivated by various questions remained opened for MRAM in the literature such as the possibility of its occurrence in flight, its impact on long-term operation or the mitigation techniques. The nature and origin of such current events was also investigated. The spatio-temporal resolution of laser and heavy ion microbeam was useful to locate the sensitive areas and to study the evolution of the current after the event triggering. These test methods also avoid any test artifact related to multiple impacts. Various tests and current mappings were performed, first all over the MRAM, and later specifically in the sensitive areas to investigate the distributions of the sensitive zones and current levels. Complementary tests were performed to clarify the nature of these events.
{"title":"High Current Events Triggered by Heavy Ion Microbeam and Pulsed Laser on a MRAM","authors":"M. Mauguet, J. Guillermin, B. Vandevelde, N. Chatry, J. Carron, F. Bezerra","doi":"10.1109/RADECS50773.2020.9857690","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857690","url":null,"abstract":"In this work, we investigate events on power consumption in a Magnetic RAM using heavy ion microbeam and pulsed laser. This study was initially motivated by various questions remained opened for MRAM in the literature such as the possibility of its occurrence in flight, its impact on long-term operation or the mitigation techniques. The nature and origin of such current events was also investigated. The spatio-temporal resolution of laser and heavy ion microbeam was useful to locate the sensitive areas and to study the evolution of the current after the event triggering. These test methods also avoid any test artifact related to multiple impacts. Various tests and current mappings were performed, first all over the MRAM, and later specifically in the sensitive areas to investigate the distributions of the sensitive zones and current levels. Complementary tests were performed to clarify the nature of these events.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116098816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857702
A. Acuña, J. Armani, M. Slimani, M. Cassé, P. Dollfus
In this work we propose a mixed method to mitigate the effects of Total Ionizing Dose (TID) on 28 nm Fully-Depleted Silicon-On-Insulator (FDSOI) MOSFETs exposed to $60_{Co}$ gamma radiation at two different dose rates. This new thermal-electrical method uses thermal regeneration by applying rapid annealing cycles in addition to threshold voltage modulation inherent in FDSOI technology. Applying this methodology could enhance the transistor reliability during a mission in radiative environments.
{"title":"A Mixed Method to Mitigate the TID Effects on 28nm FDSOI Transistors","authors":"A. Acuña, J. Armani, M. Slimani, M. Cassé, P. Dollfus","doi":"10.1109/RADECS50773.2020.9857702","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857702","url":null,"abstract":"In this work we propose a mixed method to mitigate the effects of Total Ionizing Dose (TID) on 28 nm Fully-Depleted Silicon-On-Insulator (FDSOI) MOSFETs exposed to $60_{Co}$ gamma radiation at two different dose rates. This new thermal-electrical method uses thermal regeneration by applying rapid annealing cycles in addition to threshold voltage modulation inherent in FDSOI technology. Applying this methodology could enhance the transistor reliability during a mission in radiative environments.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114284251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857701
P. Martín-Holgado, A. J. Romero, J. Labrador, A. Vizcaino, J. Herranz, Y. Morilla
In this work we present the commissioning of the first system, implemented in Spain, to perform irradiation testing at Low and High Temperature with Gamma, Neutrons and Low-Energy Protons. A new chamber has been designed and manufactured in order to be shared in three different laboratories at the CNA. The current control system covers the standard operating temperature ranges of electronic components for space applications.
{"title":"First Chamber in Spain to Irradiate at Low and High Temperature with Gamma, Neutrons and Low-Energy Protons","authors":"P. Martín-Holgado, A. J. Romero, J. Labrador, A. Vizcaino, J. Herranz, Y. Morilla","doi":"10.1109/RADECS50773.2020.9857701","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857701","url":null,"abstract":"In this work we present the commissioning of the first system, implemented in Spain, to perform irradiation testing at Low and High Temperature with Gamma, Neutrons and Low-Energy Protons. A new chamber has been designed and manufactured in order to be shared in three different laboratories at the CNA. The current control system covers the standard operating temperature ranges of electronic components for space applications.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129024073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857735
B. Podlepetsky, V. Pershenkov, A. Bakerenkov, V. Felitsyn
We have estimated various types of errors dosimeters based on n-channel field-effect transistors with a metal-insulator-semiconductor structure (called as RADFETs). The radiation sensitivity have been experimentally investigated. There were measured the gate voltage of RADFET -based dosimeter as function of total ionizing dose (TID) at constant values of the drain current and the drain - source voltage, as well as the current -voltage characteristics before and after irradiations at different TID. We showed how radiation sensitivity and errors of sensors are depending on TID and electrical modes. Electro-physical models were proposed to interpret obtained results.
{"title":"Estimation of errors of RADFET-based dosimeters","authors":"B. Podlepetsky, V. Pershenkov, A. Bakerenkov, V. Felitsyn","doi":"10.1109/RADECS50773.2020.9857735","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857735","url":null,"abstract":"We have estimated various types of errors dosimeters based on n-channel field-effect transistors with a metal-insulator-semiconductor structure (called as RADFETs). The radiation sensitivity have been experimentally investigated. There were measured the gate voltage of RADFET -based dosimeter as function of total ionizing dose (TID) at constant values of the drain current and the drain - source voltage, as well as the current -voltage characteristics before and after irradiations at different TID. We showed how radiation sensitivity and errors of sensors are depending on TID and electrical modes. Electro-physical models were proposed to interpret obtained results.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129040954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857709
A. M. Galimov, Alexey I. Gukov, Andrey A. Klyayn, Alexandr E. Koziukov
Multiple cell upsets potentially caused by secondary ion impact were observed in the heavy ion backside irradiation experiment of 40 nm SRAM. Geant4 simulation was carried out to evaluate the occurrence probability of such events.
{"title":"Experimental and Simulation Study of Secondary Ion-Induced Multiple Cell Upsets under Heavy Ion Irradiation","authors":"A. M. Galimov, Alexey I. Gukov, Andrey A. Klyayn, Alexandr E. Koziukov","doi":"10.1109/RADECS50773.2020.9857709","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857709","url":null,"abstract":"Multiple cell upsets potentially caused by secondary ion impact were observed in the heavy ion backside irradiation experiment of 40 nm SRAM. Geant4 simulation was carried out to evaluate the occurrence probability of such events.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125213284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857699
Atsuhiro Kawaguchi, Jian Pang, Zheng Li, K. Yanagisawa, A. Shirane, K. Okada
This paper presents TID effects on 28GHz 5G bi-directional transceiver fabricated in 65nm CMOS. The transceiver employs a phased-array for beam steering. TID experiments show 2.5dB gain drop and 6degree phase variation at 1000krad doses.
{"title":"Total Ionizing Dose Effects on 28GHz CMOS Bi-Directional Transceiver for 5G Non-Terrestrial Networks","authors":"Atsuhiro Kawaguchi, Jian Pang, Zheng Li, K. Yanagisawa, A. Shirane, K. Okada","doi":"10.1109/RADECS50773.2020.9857699","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857699","url":null,"abstract":"This paper presents TID effects on 28GHz 5G bi-directional transceiver fabricated in 65nm CMOS. The transceiver employs a phased-array for beam steering. TID experiments show 2.5dB gain drop and 6degree phase variation at 1000krad doses.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129648889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-10-01DOI: 10.1109/RADECS50773.2020.9857724
J. Budroweit, N. Aksteiner, T. Firchau, J. Häseker
This paper presents the latest test results of power supervisor devices under proton irradiation. Single event effects (SEE) and the accumulated dose effects are investigated, analyzed and discussed.
本文介绍了质子辐照下功率监控装置的最新试验结果。对单事件效应和累积剂量效应进行了研究、分析和讨论。
{"title":"Compendium of Current Proton-Induced Radiation Effects Results on Integrated Power Supervisors","authors":"J. Budroweit, N. Aksteiner, T. Firchau, J. Häseker","doi":"10.1109/RADECS50773.2020.9857724","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857724","url":null,"abstract":"This paper presents the latest test results of power supervisor devices under proton irradiation. Single event effects (SEE) and the accumulated dose effects are investigated, analyzed and discussed.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123728812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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