Z. Di, Miao Zhang, Weili Liu, S. Luo, Z. An, Zhengxuan Zhang, Zhitang Song, Chenglu Lin
{"title":"The thermal stability of zirconium aluminate high-k film on strained SiGe layer","authors":"Z. Di, Miao Zhang, Weili Liu, S. Luo, Z. An, Zhengxuan Zhang, Zhitang Song, Chenglu Lin","doi":"10.1109/IWJT.2004.1306857","DOIUrl":null,"url":null,"abstract":"Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ dielectric films were deposited directly on strained SiGe substrate at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N/sub 2/ under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ film is about 900/spl deg/C, 400/spl deg/C higher than that of pure ZrO/sub 2/. The amorphous Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ film with a physical thickness of /spl sim/ 12 nm and an amorphous interfacial layer (IL) with a physical thickness of /spl sim/3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800/spl deg/C in the Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ film. X-ray photoelectron spectroscopy (XPS) reveals that zirconium and aluminum are both in the fully oxidation states.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306857","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ dielectric films were deposited directly on strained SiGe substrate at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N/sub 2/ under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ film is about 900/spl deg/C, 400/spl deg/C higher than that of pure ZrO/sub 2/. The amorphous Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ film with a physical thickness of /spl sim/ 12 nm and an amorphous interfacial layer (IL) with a physical thickness of /spl sim/3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800/spl deg/C in the Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/ film. X-ray photoelectron spectroscopy (XPS) reveals that zirconium and aluminum are both in the fully oxidation states.
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