L. Henry, A. Le Corre, D. Lecrosnier, M. Gauneau, C. Vaudry, P. Alnot, J. Olivier, S. Krawczyk
{"title":"InP substrate etched with methane reactive ion etching technique: surface characterization and epitaxial growth","authors":"L. Henry, A. Le Corre, D. Lecrosnier, M. Gauneau, C. Vaudry, P. Alnot, J. Olivier, S. Krawczyk","doi":"10.1109/ICIPRM.1990.203024","DOIUrl":null,"url":null,"abstract":"The authors have characterized the surface defects and determined the growth conditions that permit the fabrication of high-quality InP epitaxial layers. After etching, InP epitaxial layers have been grown by gas-source molecular beam epitaxy. The surface damage has been characterized by angle-resolved X-ray photoelectron spectroscopy, photoluminescence, and secondary ion mass spectroscopy. It has been found that reactive ion etching with methane, hydrogen, and argon mixtures induces a surface damaged layer that is phosphorus depleted and contains a high concentration of hydrogen atoms. Annealing under cracked phosphine restores the surface and permits the growing of high-quality InP epitaxial layers.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The authors have characterized the surface defects and determined the growth conditions that permit the fabrication of high-quality InP epitaxial layers. After etching, InP epitaxial layers have been grown by gas-source molecular beam epitaxy. The surface damage has been characterized by angle-resolved X-ray photoelectron spectroscopy, photoluminescence, and secondary ion mass spectroscopy. It has been found that reactive ion etching with methane, hydrogen, and argon mixtures induces a surface damaged layer that is phosphorus depleted and contains a high concentration of hydrogen atoms. Annealing under cracked phosphine restores the surface and permits the growing of high-quality InP epitaxial layers.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
