Ageing effects on power RF LDMOS reliability using the Transmission Line Matrix method

2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo) Pub Date : 2015-11-01 DOI:10.1109/EMCCOMPO.2015.7358349

Ahmed Aldabbagh, A. Duffy

引用次数: 0

Abstract

In this paper, the Transmission Line Matrix (TLM) method is used to study the electro-thermal performance degradation in RF LDMOS (Radio Frequency - Laterally Diffused Metal Oxide Semiconductor) transistors, through Thermal Cycling Test (TCT), as the temperature is a crucial parameter in RF devices. A hybrid approach is presented, which combines the modelling of thermal diffusion and electric effects within a two dimensional TLM model to observe the device behaviour after simulated ageing, through including the ageing loop in a unified solver. Two sets of test results are compared with published data in order to verify the performance of the proposed hybrid solver. The work shows the suitability of using the TLM to model ageing phenomenon in MOS devices.

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传输线矩阵法研究老化对功率RF LDMOS可靠性的影响

由于温度是射频器件的重要参数，本文采用传输线矩阵(TLM)方法，通过热循环测试(TCT)研究射频LDMOS (Radio Frequency - lateral diffusion Metal Oxide Semiconductor，射频横向扩散金属氧化物半导体)晶体管的电热性能退化问题。提出了一种混合方法，该方法结合了二维TLM模型中的热扩散和电效应建模，通过将老化回路包含在统一求解器中来观察模拟老化后的器件行为。为了验证所提出的混合求解器的性能，将两组测试结果与已发表的数据进行了比较。研究表明，使用TLM模型来模拟MOS器件中的老化现象是合适的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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