S. Yajima, T. Nakano, K. Sadachi, Y. Ikura, H. Miura, A. Tomozawa
{"title":"Throughput improvement in photolithography processing for flexible production","authors":"S. Yajima, T. Nakano, K. Sadachi, Y. Ikura, H. Miura, A. Tomozawa","doi":"10.1109/ISSM.2001.963015","DOIUrl":null,"url":null,"abstract":"During the drastic product change from memory devices to discrete devices, we have made various technical improvements in photolithography processing corresponding to its design characteristics, as follows: (1) establishment of fine gate processing technology; (2) optimization of throughput and processing accuracy using new photoresist processing customized for each step; and (3) establishment of flexible stepper application methods aimed at products-change-free production. Consequently, we have obtained the following beneficial results: (1) processing of 0.25 /spl mu/m discrete devices has been set up without KrF lithography; (2) a 198% improvement in stepper throughput has been achieved; and (3) a 58% reduction of waiting time has been obtained.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.963015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
During the drastic product change from memory devices to discrete devices, we have made various technical improvements in photolithography processing corresponding to its design characteristics, as follows: (1) establishment of fine gate processing technology; (2) optimization of throughput and processing accuracy using new photoresist processing customized for each step; and (3) establishment of flexible stepper application methods aimed at products-change-free production. Consequently, we have obtained the following beneficial results: (1) processing of 0.25 /spl mu/m discrete devices has been set up without KrF lithography; (2) a 198% improvement in stepper throughput has been achieved; and (3) a 58% reduction of waiting time has been obtained.