High rejection low-pass-filter design using integrated passive device technology for Chip-Scale Module Package

Yongtaek Lee, Kai Liu, R. Frye, Hyuntai Kim, Gwang Kim, B. Ahn
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引用次数: 4

Abstract

Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. These devices are receiving increased attention for developing front-end-module (FEM) applications in mobile communication systems. This paper discusses the design of low pass filters (LPF) for use in the GHz range with high harmonic rejection. In large modules, these filters make use of co-planar ground planes and lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). The use of coplanar ground in such modules introduces unique performance constraints, especially in filters requiring high harmonic rejection. These problems are discussed, along with design approaches to help mitigate them.
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采用集成无源器件技术的芯片级模块封装高抑制低通滤波器设计
目前,基于硅的射频集成无源器件(ipd)由于其低成本、占地面积小和高性能而被广泛采用。由于在移动通信系统中开发前端模块(FEM)应用,这些设备正受到越来越多的关注。本文讨论了用于高谐波抑制GHz频段的低通滤波器的设计。在大型模块中,这些滤波器在硅衬底CSMP(芯片规模模块封装)上使用共面接地面和集总IPD技术。在这些模块中使用共面接地引入了独特的性能限制,特别是在需要高谐波抑制的滤波器中。本文讨论了这些问题,以及帮助缓解这些问题的设计方法。
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