N. Xu, C. Shin, F. Andrieu, B. Ho, W. Xiong, O. Weber, T. Poiroux, B. Nguyen, Munkang Choi, V. Moroz, O. Faynot, T. Liu
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引用次数: 1
Abstract
Strain-induced mobility enhancement in thin-body MOSFETs is studied and the impact of silicon body thickness scaling on piezoresistance coefficients is analyzed to facilitate stress engineering for these advanced transistor structures. Various stressors are benchmarked in terms of their effectiveness to enhance nanometer-gate-length thin-body MOSFET performance.
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