M. Saitoh, K. Ota, C. Tanaka, K. Uchida, T. Numata
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引用次数: 2
Abstract
We demonstrated high-Ion and small-σVth 10nm-NW Tr. wth SMT. Tri-gate NW structures with small HNW and thin BOX offer high Vth tunability by Vsub. SOI tri-gate NW Tr. presented in this work is a key device in future ultralow-power CMOS LSI.
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