Reliability of Improved Power GaAs Field-Effect Transistors

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI:10.1109/IRPS.1980.362932

H. Fukui, S. H. Wemple, J. Irvin, W. Niehaus, J. Hwang, H. Cox, W. Schlosser, J. Dilorenzo

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引用次数: 9

Abstract

Some 270 6-mm power GaAs FETs with aluminum gates and silicon-nitride passivation have been aged at elevated channel temperatures under dc-bias with or without rf-drive. One catastrophic burnout and extremely slow degradation have been observed for 2-million device-hours. Tentatively estimated failure rates for burnout and for gradual degradation at a maximum channel temperature in normal operation of 110°C are both well below 100 FITs. This represents an improvement of at least one order of magnitude over previous devices whose reliability is presented in a companion paper1. In the improved model no deterioration in gates and ohmic contacts has been observed. Gradual degradation has been caused by deterioration in the channel material. However, this has been an extremely slow process, giving rise to practically no problem. There has been no difference in gradual degradation between devices aged with and without rf-drive for 6,000 hours at 250°C channel temperature. The present study has already. demonstrated that the power GaAs FETs used as the samples are very reliable.

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改进功率砷化镓场效应晶体管的可靠性

在直流偏置或不带rf驱动下，在升高的通道温度下对270个带有铝栅极和氮化硅钝化的6-mm功率GaAs场效应管进行了老化。在200万设备小时内观察到一次灾难性的耗尽和极其缓慢的退化。初步估计，在110°C正常运行的最高通道温度下，燃尽和逐渐退化的故障率都远低于100 FITs。这比之前的设备至少提高了一个数量级，这些设备的可靠性已在配套论文中提出。在改进的模型中，没有观察到栅极和欧姆接触的退化。逐渐的退化是由于通道材料的退化造成的。然而，这是一个极其缓慢的过程，几乎没有产生任何问题。在250°C通道温度下，使用和不使用rf驱动的设备在6000小时的老化过程中没有差异。目前的研究已经。证明了作为样品的功率GaAs场效应管是非常可靠的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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18th International Reliability Physics Symposium

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