{"title":"Subthreshold slope of accumulation-mode p-channel SOI MOSFETs","authors":"J. Colinge, F. van de Wiele, D. Flandre","doi":"10.1109/SOI.1993.344558","DOIUrl":null,"url":null,"abstract":"There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed, the subthreshold slope is given by: S=kT/q ln10 (1+/spl alpha/) where /spl alpha/ is equal to the ratio C/sub bb//C/sub ox1/. In other words, /spl alpha/ is the ratio between the capacitance of the structure below the channel and that of the structure above it. C/sub bb/ is equal to C/sub depl/, C/sub si/ and (C/sub si/ in series with C/sub ox2/) in bulk, fully depleted (FD) SOI with back accumulation and fully depleted SOI devices, respectively. As the potential distribution in an accumulation-mode (AM) p-channel SOI MOSFET in the subthreshold regime is similar to that of an n-channel FD enhancement-mode (FDEM) device, the same analytical model can be used to determine S.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed, the subthreshold slope is given by: S=kT/q ln10 (1+/spl alpha/) where /spl alpha/ is equal to the ratio C/sub bb//C/sub ox1/. In other words, /spl alpha/ is the ratio between the capacitance of the structure below the channel and that of the structure above it. C/sub bb/ is equal to C/sub depl/, C/sub si/ and (C/sub si/ in series with C/sub ox2/) in bulk, fully depleted (FD) SOI with back accumulation and fully depleted SOI devices, respectively. As the potential distribution in an accumulation-mode (AM) p-channel SOI MOSFET in the subthreshold regime is similar to that of an n-channel FD enhancement-mode (FDEM) device, the same analytical model can be used to determine S.<>
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