Liquid Crystal Technique as a Failure Analysis Tool

A. Goel, A. Gray
{"title":"Liquid Crystal Technique as a Failure Analysis Tool","authors":"A. Goel, A. Gray","doi":"10.1109/IRPS.1980.362925","DOIUrl":null,"url":null,"abstract":"This paper describes a method for identifying location of hot spots/shorts on MOS integrated circuits using liquid crystal technique. Several articles have been published discussing the theory and principles of this technique. This paper will concentrate on the practical aspects of the method.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362925","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

This paper describes a method for identifying location of hot spots/shorts on MOS integrated circuits using liquid crystal technique. Several articles have been published discussing the theory and principles of this technique. This paper will concentrate on the practical aspects of the method.
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液晶技术作为失效分析工具
本文介绍了一种利用液晶技术识别MOS集成电路热点/短路位置的方法。已经发表了几篇文章来讨论这种技术的理论和原理。本文将集中讨论该方法的实用方面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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