A Novel Injection-Locked Frequency Tripler for V-band Applications

Yu‐Hsin Chang, Yen-Chung Chiang
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引用次数: 3

Abstract

In this paper, a novel injection-locked frequency tripler (ILFT) implemented in the 90-nm CMOS process for V- band applications is presented. By adopting stacked CMOS cross-coupled pairs, a differential harmonic current injection circuit, and a resonator network technique, the locking range, the harmonic rejection ratio (HRR), and the power consumption of the proposed ILFT are improved. The locking range is from 61.2 to 64.2 GHz at an input power level of 0 dBm. The proposed ILFT has 30 dBc and 34 dBc to injected fundamental and second- order harmonic suppression, respectively. The core circuit consumes 7.48 mW dc power from a 1.1-V supply.
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一种用于v波段的新型注入锁频三倍器
本文提出了一种新型的注入锁定三倍频器(ILFT),用于V波段的90纳米CMOS工艺。通过采用叠置CMOS交叉耦合对、差分谐波电流注入电路和谐振器网络技术,提高了ILFT的锁定范围、谐波抑制比(HRR)和功耗。锁定范围为61.2至64.2 GHz,输入功率为0 dBm。所提出的ILFT分别具有30 dBc和34 dBc的注入基频抑制和二阶谐波抑制。核心电路从1.1 v电源中消耗7.48 mW直流功率。
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