{"title":"40nm Donut Scan Failed Induced by Active Drain/Source Stress Issue","authors":"Wen Bin Low, James Lai, Liang Chun Sung","doi":"10.1109/ASMC.2019.8791778","DOIUrl":null,"url":null,"abstract":"40nm devices suffered donut scan bin failure and result in yield loss, and these failures are particularly occurs in devices with high-Vt nMOSFET (HVTN) cores. These failures are mainly caused by combination of two factors: HVTN manufacturing process and Active (RX) layer design. Based on studies, reduce the RX CD and introduction of N2 implant in HVTN process step help to reduce yield loss.","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791778","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
40nm devices suffered donut scan bin failure and result in yield loss, and these failures are particularly occurs in devices with high-Vt nMOSFET (HVTN) cores. These failures are mainly caused by combination of two factors: HVTN manufacturing process and Active (RX) layer design. Based on studies, reduce the RX CD and introduction of N2 implant in HVTN process step help to reduce yield loss.
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