SiGe devices and circuits: where are advantages over III/V ?

Abstract

SiGe devices are just on an upswing due to their compatibility with existing silicon technologies. Outstanding SiGe ICs manufactured at high integration levels, high volume and low cost are envisaged. Concerning frequency they will fill the gap between standard Si and III/V. In some aspects like low-frequency and high-frequency noise, and low power consumption SiGe hetero bipolar transistors (HBTs) are advantageous over III/V-HBTs and approach the performance of some high electron mobility transistors (HEMTS), at least below 10 GHz. The paper reviews state of the art and potential of electronic SiGe heterodevices and tries a comparison to respective III/V devices.