C. Bozada, D. Barlage, J. Barrette, R. Dettmer, M. Mack, J. S. Sewell, Glen D. Via, L. W. Yang, D. R. Helms, J. J. Komiak
{"title":"Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub","authors":"C. Bozada, D. Barlage, J. Barrette, R. Dettmer, M. Mack, J. S. Sewell, Glen D. Via, L. W. Yang, D. R. Helms, J. J. Komiak","doi":"10.1109/GAAS.1995.528983","DOIUrl":null,"url":null,"abstract":"Heterojunction bipolar transistor devices and circuits were fabricated using thermal shunt and bathtub thermal management techniques. Broadband cascode MMICs exhibited 10-14 dB gain at an output power of 2.5-3.0 Watts across 7-11 GHz. A 200 /spl mu/m/sup 2/ common-emitter unit cell achieved 7-8 dB linear power gain and 40% power-added efficiency at a noise power ratio (NPR) of 18 dBc at 12 GHz. Under single tone measurements at 12 GHz, the unit cell achieved 52% power-added efficiency, with 9.5 dB linear gain, 8 dB power gain and 240 mW output power at 5 V bias.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Heterojunction bipolar transistor devices and circuits were fabricated using thermal shunt and bathtub thermal management techniques. Broadband cascode MMICs exhibited 10-14 dB gain at an output power of 2.5-3.0 Watts across 7-11 GHz. A 200 /spl mu/m/sup 2/ common-emitter unit cell achieved 7-8 dB linear power gain and 40% power-added efficiency at a noise power ratio (NPR) of 18 dBc at 12 GHz. Under single tone measurements at 12 GHz, the unit cell achieved 52% power-added efficiency, with 9.5 dB linear gain, 8 dB power gain and 240 mW output power at 5 V bias.
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