R. Lai, M. Biedenbender, J. Lee, K. Tan, D. Streit, P. Liu, M. Hoppe, B. Allen
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引用次数: 20
Abstract
We present a unique high yield, high performance 0.15 /spl mu/m HEMT production process which supports fabrication of MMW power MMICs up to 70 GHz. This process has been transferred successfully from an R&D process to TRW's GaAs production line. This paper reports the on-wafer test results of more than 1300 V-band MMIC PA circuits measured over 24 wafers. The best 2-stage V-band power MMICs have demonstrated state-of-the-art performance with 9 dB power gain, 20% PAE and 330 mW output power. An excellent RF yield of 60% was achieved with an 8 dB power gain and 250 mW output power specification.
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