A very high isolation GaAs SPDT switch IC sealed in an ultra compact plastic package

Abstract

A high-isolation switch IC with 31 dB isolation and 0.88 dB insertion loss at 1.65 GHz, sealed in a 6-pin ultra-compact plastic package having approximately 1/4 the conventional area, was developed for the first time. An electromagnetic-field simulation analysis of the isolation characteristics between the lead pins of the ultra-compact package was used for this IC together with a new design method which takes into account deterioration of the isolation characteristics due to the plastic molding. Electromagnetic-field simulation was also used in the layout design to minimize chip size.