{"title":"Operation of poly emitter bipolar npn and p-channel JFETs near liquid helium (10 K) temperature","authors":"A.K. Kapoor, H.K. Hingarh, T. S. Jayadev","doi":"10.1109/BIPOL.1988.51081","DOIUrl":null,"url":null,"abstract":"Operation of poly bipolar npn and p-channel JFET transistors is described up to 10 K. Current gain of the npn transistor equal to 3 is measured at 9 K. Transconductance of the p-channel JFET remains constant for 60 K>T>10 K. Certain new phenomena are observed in both the devices below 60 K which are attributed to carrier freezeout and high-level injection. These experimental results also tend to suggest that the useful range of operation of these devices can be extended to below liquid nitrogen temperature.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"158 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Operation of poly bipolar npn and p-channel JFET transistors is described up to 10 K. Current gain of the npn transistor equal to 3 is measured at 9 K. Transconductance of the p-channel JFET remains constant for 60 K>T>10 K. Certain new phenomena are observed in both the devices below 60 K which are attributed to carrier freezeout and high-level injection. These experimental results also tend to suggest that the useful range of operation of these devices can be extended to below liquid nitrogen temperature.<>
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