{"title":"Deformation of AL Metallization in Plastic Encapsulated Semiconductor Devices Caused by Thermal Shock","authors":"Masaaki Isagawa, Yuzi Iwasaki, T. Sutoh","doi":"10.1109/IRPS.1980.362935","DOIUrl":null,"url":null,"abstract":"Deformation of Al metallization was observed during thermal shock tests of plastic encapsulated semiconductor devices. The authors made clear quantitatively the relations between the deformation length and Si chip size, distance from deformation center, molding resin, temperature difference in thermal shock etc. and tried to explain the mechanisms and the cause of this phenomenon.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 38
Abstract
Deformation of Al metallization was observed during thermal shock tests of plastic encapsulated semiconductor devices. The authors made clear quantitatively the relations between the deformation length and Si chip size, distance from deformation center, molding resin, temperature difference in thermal shock etc. and tried to explain the mechanisms and the cause of this phenomenon.