60-GHz MMIC image-rejection downconverter using InGaP/InGaAs HEMT

T. Saito, N. Hidaka, K. Ono, Y. Ohashi, T. Shimura
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引用次数: 19

Abstract

We have designed, fabricated, and evaluated an InGaP/InGaAs/GaAs HEMT 60-GHz monolithic image-rejection downconverter. The downconverter consists of a four-stage low-noise amplifier and a single-balanced image-rejection active-drain mixer. The HEMTs used in the downconverter have gates of 0.1 /spl mu/m long and 100 /spl mu/m wide. The downconverter has a maximum conversion gain of 22.9 dB at 61 GHz and a minimum noise figure of 3.16 dB at 58.5 GHz with 5 dBm LO power input and 140 MHz IF output. These characteristics are, to our knowledge, the best report of an MMIC downconverter using an image-rejection active-drain mixer in this frequency range. This is a significant improvement from our previous report results in terms of the noise figure and conversion gain.
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采用InGaP/InGaAs HEMT的60 ghz MMIC图像抑制下变频器
我们设计、制作并评估了InGaP/InGaAs/GaAs HEMT 60 ghz单片图像抑制下变频器。下变频器由一个四级低噪声放大器和一个单平衡阻像有源漏源混频器组成。下变频器中使用的hemt栅极长0.1 /spl μ m,宽100 /spl μ m。该下变频器在61 GHz时的最大转换增益为22.9 dB,在58.5 GHz时的最小噪声系数为3.16 dB,输入5 dBm的低电平功率和140 MHz的中频输出。据我们所知,这些特性是在该频率范围内使用抗像有源漏极混频器的MMIC下变频器的最佳报告。这与我们之前的报告结果相比,在噪声系数和转换增益方面有了显著的改进。
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