{"title":"Power electronics innovation by Silicon Carbide power semiconductor devices","authors":"H. Okumura","doi":"10.1109/IMFEDK.2014.6867086","DOIUrl":null,"url":null,"abstract":"The importance of power electronics innovation in the future human society and related technology roadmap is presented. Based on the roadmap, recent progress in widegap semiconductor power electronics is reviewed, especially focused on Silicon Carbide (SiC) technology [1-3].","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The importance of power electronics innovation in the future human society and related technology roadmap is presented. Based on the roadmap, recent progress in widegap semiconductor power electronics is reviewed, especially focused on Silicon Carbide (SiC) technology [1-3].
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