High Performance and DNU-Recovery Spintronic Retention Latch for Hybrid MTJ/CMOS Technology

Abstract

With the advancement of CMOS technologies, circuits have become more vulnerable to soft errors, such as single-node-upsets (SNUs) and double-node-upsets (DNUs). To effectively provide nonvolatility as well as tolerance against DNUs caused by radiation, this paper proposes a nonvolatile and DNU resilient latch that mainly comprises two magnetic tunnel junction (MTJ), two inverters and eight C-elements. Since two MTJs are used and all internal nodes are interlocked, the latch can provide nonvolatility and recovery from all possible DNUs. Simulation results demonstrate the nonvolatility, DNU recovery and high performance of the proposed latch.