{"title":"An Advanced Ge Pre-amorphization Salicide Technology For Sub-quarter-micrometer SOI CMOS Devices","authors":"Hsiao, Ping Liu, Woo","doi":"10.1109/VLSIT.1997.623712","DOIUrl":null,"url":null,"abstract":"A novel salicide technology for ultra-thin SO1 films is proposed. Ge pre-amorphization is used to facilitate the silicide formation at low tcmperaturc (- 400°C) and effectively control the silicide depth without void formation. Sub-0.25 pm SO1 CMOS devices fabricated using this advanced technology have shown substantially reduced source/drain resistance as well as good electrical results.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"357 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A novel salicide technology for ultra-thin SO1 films is proposed. Ge pre-amorphization is used to facilitate the silicide formation at low tcmperaturc (- 400°C) and effectively control the silicide depth without void formation. Sub-0.25 pm SO1 CMOS devices fabricated using this advanced technology have shown substantially reduced source/drain resistance as well as good electrical results.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
