High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications

W.W. Wenas, A. Setiawan, F. Adriyanto, H. Sangian
{"title":"High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications","authors":"W.W. Wenas, A. Setiawan, F. Adriyanto, H. Sangian","doi":"10.1109/COMMAD.1998.791652","DOIUrl":null,"url":null,"abstract":"Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H/sub 2/O and dimethylzinc/H/sub 2/O reactant systems. The dimethylzinc/H/sub 2/O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 /spl mu/m/h was obtained. The B/sub 2/H/sub 6/ was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B/sub 2/H/sub 6/ flow rate, the films with a sheet resistivity as low as 4 /spl Omega//sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"270 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H/sub 2/O and dimethylzinc/H/sub 2/O reactant systems. The dimethylzinc/H/sub 2/O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 /spl mu/m/h was obtained. The B/sub 2/H/sub 6/ was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B/sub 2/H/sub 6/ flow rate, the films with a sheet resistivity as low as 4 /spl Omega//sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用金属有机化学气相沉积技术制备高生长速率透明导电氧化锌薄膜
以二乙基锌/H/sub 2/O和二甲基锌/H/sub 2/O为原料,采用金属有机化学气相沉积法制备了透明导电氧化锌薄膜。本研究首次引入了二甲基锌/H/亚甲基锌/O反应体系来生长ZnO薄膜。获得了10亩/米/小时的高生长率。B/sub 2/H/sub 6/为n型掺杂剂,可降低薄膜的片电阻率。通过优化B/sub 2/H/sub 6/流速,得到的薄膜电阻率低至4 /spl ω //sq。在400 ~ 1000 nm波长范围内,薄膜具有90%左右的高透光率,适合作为透明导电材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
InGaP/GaAs resonant-tunneling transistor (RTT) Gallium arsenide technology for low-power, high performance processor cores Thick-film gas and humidity sensing array based on semiconducting metal oxides Compact modeling of high-frequency, small-dimension bipolar transistors Magneto-transport studies in AlGaN/GaN MODFETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1