M. Current, Yao-Jen Lee, Yu-Lun Lu, Ta-Chun Cho, T. Chao, H. Onoda, K. Sekar, N. Tokoro
{"title":"Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions","authors":"M. Current, Yao-Jen Lee, Yu-Lun Lu, Ta-Chun Cho, T. Chao, H. Onoda, K. Sekar, N. Tokoro","doi":"10.1109/IWJT.2013.6644511","DOIUrl":null,"url":null,"abstract":"Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 13th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2013.6644511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Effects of microwave (MWA) at ≈500 C and rapid-thermal annealing at 600 to 1000 C are compared for phosphorous-doped, strained Si(100) and (110) implanted with molecular Carbon (C7H7) ions. Substitutional Carbon levels at 1.44% were achieved for P-doped, C7 implanted strained nMOS S/D type junctions with MWA.
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