Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe: Analysis of dopants in SiGe-channel Quantum Well

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI:10.1109/IWJT.2013.6644510

T. Noda, L. Witters, J. Mitard, E. Rosseel, G. Hellings, C. Vrancken, P. Eyben, H. Bender, A. Thean, N. Horiguchi, W. Vandervorst

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Abstract

Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect analysis in ultra shallow junction formation in Si and SiGe. An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and higher As concentration in SiGe-channel. The difference of pocket diffusion is one of possible reason for the higher Vth mismatch for SiGe-channel with As pocket than for Si-channel. To avoid implant damage influence, Implant-Free SiGe channel-QW with B-doped SiGe epi for extension-S/D formation is used. KMC simulation and SSRM shows that B migration from B-doped SiGe raised-S/D to SiGe-channel can form S/D-extension overlap.

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Si和SiGe中掺杂物扩散和缺陷的动力学蒙特卡罗模拟:SiGe通道量子阱中掺杂物的分析

采用原子动力学蒙特卡罗(KMC)扩散模型对Si和SiGe超浅结形成过程中的掺杂物扩散和缺陷进行了分析。用原子KMC方法分析了sige通道量子阱中掺杂物的扩散和缺陷。高Ge含量的SiGe薄层对锗通道量子阱的植入损伤和硼瞬态增强扩散抑制以及缺陷演化具有重要影响。KMC表明，在sige沟道pet中，As袋向sige沟道扩散增强，且sige沟道中As浓度升高。袋扩散的差异可能是硅原子通道与硅原子通道相比具有更高v值失配的原因之一。为了避免植入物损伤的影响，我们使用了无植入物SiGe通道- qw和掺杂b的SiGe epi来扩展- s /D形成。KMC模拟和SSRM表明，B从掺B的SiGe提高S/D到SiGe通道的迁移可以形成S/D扩展重叠。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 13th International Workshop on Junction Technology (IWJT)

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