V. Zelenin, A. Lebedev, M. Rastegaeva, D. Davydov, V. Chelnokov
{"title":"New result in 6H SiC \"site-competition\" epitaxy","authors":"V. Zelenin, A. Lebedev, M. Rastegaeva, D. Davydov, V. Chelnokov","doi":"10.1109/SMICND.1998.733762","DOIUrl":null,"url":null,"abstract":"The investigation of the 6H-SiC layers grown by CVD in methane-silane-hydrogen system shows that with increase of C/Si ratio in gas phase there is the inversion of type of conductivity. I-DLTS study of grown p-type conductivity layers shows that a main contribution to N/sub A/-N/sub D/ gives a deep acceptor centers, which are close to parameters of usual background centers in layers prepared by sublimation epitaxy method.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.733762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The investigation of the 6H-SiC layers grown by CVD in methane-silane-hydrogen system shows that with increase of C/Si ratio in gas phase there is the inversion of type of conductivity. I-DLTS study of grown p-type conductivity layers shows that a main contribution to N/sub A/-N/sub D/ gives a deep acceptor centers, which are close to parameters of usual background centers in layers prepared by sublimation epitaxy method.
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