Riazul Arefin, Seunghyun Lee, Hyemin Jung, J. Ha, Weicheng You, Arnob Ghosh, Md. Saiful Islam Sumon, J. S. Kim, S. Krishna, S. Arafin
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引用次数: 0
Abstract
Quaternary InAlGaAs/GaAs quantum dots (QDs) were grown to achieve emission at <1 μm and the effects of post-growth thermal annealing on the optical and morphological properties were experimentally investigated. A QD density as high as > 5 × 1010 cm−2 and FWHM of 77 meV at 20 K are achieved for the as-grown QD ensemble. After the rapid thermal annealing (RTA) treatment, remarkable improvements in the optical properties of the QDs are observed as the integrated photoluminescence (PL) intensity improves by a factor of 2 and the FWHM reduces to 29 meV.
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