Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930363
K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh, H. Fujishiro
We investigated the effect of strain in channel on the electron transport properties of Ga1-xInxSb channel HEMT structures (x = 0.60, 0.78, 0.85, 0.90 and 0.94) with the strained-Al0.40In0.60Sb/Al0.25In0.75Sb stepped buffer. The strain in Ga1-xInxSb channel is determined by the Al0.25In0.75Sb lower buffer. The electron mobility (μ) showed the maximum value at x = 0.78 (unstrained). The sheet electron density (Ns) showed the maximum value at x = 0.60 (tensile strained) due to the deepest quantum well. We obtained the minimum sheet resistance (Rs) of 202 Ω/□ for the Ga0.22In0.78Sb channel. The μ may reach nearly 30,000 cm2/Vs by reducing threading dislocation density.
{"title":"Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer","authors":"K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh, H. Fujishiro","doi":"10.1109/CSW55288.2022.9930363","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930363","url":null,"abstract":"We investigated the effect of strain in channel on the electron transport properties of Ga<inf>1-</inf><inf>x</inf>In<inf>x</inf>Sb channel HEMT structures (x = 0.60, 0.78, 0.85, 0.90 and 0.94) with the strained-Al<inf>0.40</inf>In<inf>0.60</inf>Sb/Al<inf>0.25</inf>In<inf>0.75</inf>Sb stepped buffer. The strain in Ga<inf>1-</inf><inf>x</inf>In<inf>x</inf>Sb channel is determined by the Al<inf>0.25</inf>In<inf>0.75</inf>Sb lower buffer. The electron mobility (μ) showed the maximum value at x = 0.78 (unstrained). The sheet electron density (N<inf>s</inf>) showed the maximum value at x = 0.60 (tensile strained) due to the deepest quantum well. We obtained the minimum sheet resistance (R<inf>s</inf>) of 202 Ω/□ for the Ga<inf>0.22</inf>In<inf>0.78</inf>Sb channel. The μ may reach nearly 30,000 cm<sup>2</sup>/Vs by reducing threading dislocation density.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116935925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/csw55288.2022.9930468
B. Lin, Yuto Imae, Hnin Lai Lai Aye, K. Hayashi, Haruki Orito, B. Ma, S. Kuboya, Hideto Miyake, Y. Ishitani
Thermal emissions from metal/dielectric-material stripe structures on the surface of dielectric materials are observed. These emissions are attributed to electric-dipole emissions induced by coherent thermal lattice vibrations in the surface structures of a few micrometers. The structures on undoped GaAs and GaP show the emission close to the longitudinal optical (LO) phonon energy, while the peak energy of emission from the structures on ZnO and GaN is located in between the LO and transverse optical (TO) mode energies. The emission intensities from GaN and ZnO are stronger than that of GaAs.
{"title":"Thermal radiation intensities in mid-infrared region from semiconductor-metal micro-grating structure","authors":"B. Lin, Yuto Imae, Hnin Lai Lai Aye, K. Hayashi, Haruki Orito, B. Ma, S. Kuboya, Hideto Miyake, Y. Ishitani","doi":"10.1109/csw55288.2022.9930468","DOIUrl":"https://doi.org/10.1109/csw55288.2022.9930468","url":null,"abstract":"Thermal emissions from metal/dielectric-material stripe structures on the surface of dielectric materials are observed. These emissions are attributed to electric-dipole emissions induced by coherent thermal lattice vibrations in the surface structures of a few micrometers. The structures on undoped GaAs and GaP show the emission close to the longitudinal optical (LO) phonon energy, while the peak energy of emission from the structures on ZnO and GaN is located in between the LO and transverse optical (TO) mode energies. The emission intensities from GaN and ZnO are stronger than that of GaAs.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127441045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/csw55288.2022.9930417
A. Dadgar, F. Hörich, Ralf Borgmann, C. Lüttich, J. Bläsing, G. Schmidt, P. Veit, J. Christen, A. Strittmatter
Sputtering epitaxy is a low cost process allowing large area deposition at lower growth temperatures than metalorganic vapour phase epitaxy (MOVPE) and may ease e.g. integration with Si CMOS technology. We present high quality AlN and GaN epitaxial layer structures grown on Si(111) substrates by reactive magnetron sputtering. By optimizing nucleation and growth on Si(111) substrates AlN layers are obtained with twist and tilt values comparable to MOVPE grown samples and with very low surface roughness free of any columnar structure. Also the entire compositional range of AlGaN has been addressed by co-sputtering of Al and Ga. Thin undoped buffer layer samples show high breakdown field strengths well above 1×106 V/cm which is prerequisite for FET applications. We also report on reactive sputtering of material combinations that are largely inaccessible to MOVPE, e.g., transition metal nitrides and AlScN.
{"title":"Sputter epitaxy of AlN and GaN on Si for device applications","authors":"A. Dadgar, F. Hörich, Ralf Borgmann, C. Lüttich, J. Bläsing, G. Schmidt, P. Veit, J. Christen, A. Strittmatter","doi":"10.1109/csw55288.2022.9930417","DOIUrl":"https://doi.org/10.1109/csw55288.2022.9930417","url":null,"abstract":"Sputtering epitaxy is a low cost process allowing large area deposition at lower growth temperatures than metalorganic vapour phase epitaxy (MOVPE) and may ease e.g. integration with Si CMOS technology. We present high quality AlN and GaN epitaxial layer structures grown on Si(111) substrates by reactive magnetron sputtering. By optimizing nucleation and growth on Si(111) substrates AlN layers are obtained with twist and tilt values comparable to MOVPE grown samples and with very low surface roughness free of any columnar structure. Also the entire compositional range of AlGaN has been addressed by co-sputtering of Al and Ga. Thin undoped buffer layer samples show high breakdown field strengths well above 1×106 V/cm which is prerequisite for FET applications. We also report on reactive sputtering of material combinations that are largely inaccessible to MOVPE, e.g., transition metal nitrides and AlScN.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125075398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Su Nan, K. Tsuboi, S. Kobayashi, K. Sugimoto, M. Kobayashi
SnTe films are prepared on GaAs (100) substrates by molecular beam epitaxy, and the surface morphology and electronic property are characterized using scanning electron microscope (SEM) and Hall effect measurements, respectively. A distribution of dotted materials on the surface were observed by SEM, which was probably related to segregated Te. The inclusion of hexagonal Te in the film has results in poor electronic property of the film.
{"title":"Surface morphology and electronic properties of SnTe films prepared by molecular beam epitaxy","authors":"Su Nan, K. Tsuboi, S. Kobayashi, K. Sugimoto, M. Kobayashi","doi":"10.1002/pssa.202200555","DOIUrl":"https://doi.org/10.1002/pssa.202200555","url":null,"abstract":"SnTe films are prepared on GaAs (100) substrates by molecular beam epitaxy, and the surface morphology and electronic property are characterized using scanning electron microscope (SEM) and Hall effect measurements, respectively. A distribution of dotted materials on the surface were observed by SEM, which was probably related to segregated Te. The inclusion of hexagonal Te in the film has results in poor electronic property of the film.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125169081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930428
W. Yanwachirakul, Pengcheng Zhou, Abdulaziz E. Elfiqi, Ryota Tanomura, Takuo Tanemura, M. Sugiyama, Y. Nakano
A non-abrupt heterointerface owing to a formation of intermixing layers in the InGaAs/InP superlattice (SL) grown by metal organic vapor-phase epitaxy has been improved by optimizing a purging period of TBP onto the InGaAs terminated surface, and TBA onto the InP terminated surface. The SL structure was analyzed by the ω-2θ results around the InP (004) symmetric plane measured by high-resolution X-ray diffraction. In order to estimate a thickness of intermixing layers, we alternatively proposed a model using Fourier transform of a periodic trapezoid-shape scattering function to fit to an intensity of high-order satellite peaks. Our results show that purging the InGaAs terminated surface with TBP for 2–4 s could effectively remove residual As atoms and reduce As carry-over in the next-grown InP layer. By purging the InP terminated surface with TBA, even though an effect of P carry-over is reduced, the SL becomes more suffered from a diffusion of As atoms into the beneath InP layer.
{"title":"Impact of Group-V Gas Purging Period on a Reduction of Intermixing Layer Formation at Heterointerface of InGaAs/InP Superlattice","authors":"W. Yanwachirakul, Pengcheng Zhou, Abdulaziz E. Elfiqi, Ryota Tanomura, Takuo Tanemura, M. Sugiyama, Y. Nakano","doi":"10.1109/CSW55288.2022.9930428","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930428","url":null,"abstract":"A non-abrupt heterointerface owing to a formation of intermixing layers in the InGaAs/InP superlattice (SL) grown by metal organic vapor-phase epitaxy has been improved by optimizing a purging period of TBP onto the InGaAs terminated surface, and TBA onto the InP terminated surface. The SL structure was analyzed by the ω-2θ results around the InP (004) symmetric plane measured by high-resolution X-ray diffraction. In order to estimate a thickness of intermixing layers, we alternatively proposed a model using Fourier transform of a periodic trapezoid-shape scattering function to fit to an intensity of high-order satellite peaks. Our results show that purging the InGaAs terminated surface with TBP for 2–4 s could effectively remove residual As atoms and reduce As carry-over in the next-grown InP layer. By purging the InP terminated surface with TBA, even though an effect of P carry-over is reduced, the SL becomes more suffered from a diffusion of As atoms into the beneath InP layer.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122397747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930463
Jiaxing Wang, Yipeng Ji, Zhuokai Yang, Huawen Hu, Fangzhou Li, Jianqiang Chen, Chihchiang Shen, C. Chang-Hasnain
The VCSEL device with a SiN microdot of 2um in diameter and 120nm in thickness showed a very strong mode suppression of 20dB on the 0th-order mode. The resulting spectral RMS was reduced significantly from 0.65nm to 0.47nm. Excellent PAM4 53Gbps eye diagram was obtained after 100-meter fiber transmission.
{"title":"Microdot for transverse mode control in VCSEL","authors":"Jiaxing Wang, Yipeng Ji, Zhuokai Yang, Huawen Hu, Fangzhou Li, Jianqiang Chen, Chihchiang Shen, C. Chang-Hasnain","doi":"10.1109/CSW55288.2022.9930463","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930463","url":null,"abstract":"The VCSEL device with a SiN microdot of 2um in diameter and 120nm in thickness showed a very strong mode suppression of 20dB on the 0th-order mode. The resulting spectral RMS was reduced significantly from 0.65nm to 0.47nm. Excellent PAM4 53Gbps eye diagram was obtained after 100-meter fiber transmission.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117030176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930402
A. Remis, D. Díaz-Thomas, L. M. Bartolomé, M. Rio-Calvo, A. Gilbert, G. Boissier, A. Baranov, J. Rodriguez, L. Cerutti, É. Tournié
We report on GaSb based interband lasers grown on on-axis silicon substrate working in continuous wave above temperature and emitting between 2 and 5 μm. We will present the dependance of the laser properties with the design of the active regions.
{"title":"Mid-infrared Sb-based interband lasers grown on on-axis Si (001) substrates","authors":"A. Remis, D. Díaz-Thomas, L. M. Bartolomé, M. Rio-Calvo, A. Gilbert, G. Boissier, A. Baranov, J. Rodriguez, L. Cerutti, É. Tournié","doi":"10.1109/CSW55288.2022.9930402","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930402","url":null,"abstract":"We report on GaSb based interband lasers grown on on-axis silicon substrate working in continuous wave above temperature and emitting between 2 and 5 μm. We will present the dependance of the laser properties with the design of the active regions.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117246358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930367
V. Joshi, S. Bauer, V. Sichkovskyi, K. Fuchs, J. Reithmaier
An InP-based quantum dot (QD) laser with InAs QDs emitting around 1.3 μm wavelength was realized. In comparison to C-band QD lasers, a modified growth process enhancing the nucleation of smaller QDs was developed, which allows the emission at the desired wavelength and preserves a high dot density. The influence of growth parameters on the formation of homogenous QDs was investigated. Broad area and ridge waveguide lasers were processed and first material and device results will be presented. A high internal quantum efficiency of 0.8 and a record value in the modal gain of more than 90 cm−1 for a laser with 6 QD layers were obtained, which relates to 15 cm−1 per QD layer. Temperature dependent laser characteristics show best T0 values up to 250 K between 20 and 70 °C.
{"title":"High-gain InP-based quantum dot lasers emitting at 1.3 μm","authors":"V. Joshi, S. Bauer, V. Sichkovskyi, K. Fuchs, J. Reithmaier","doi":"10.1109/CSW55288.2022.9930367","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930367","url":null,"abstract":"An InP-based quantum dot (QD) laser with InAs QDs emitting around 1.3 μm wavelength was realized. In comparison to C-band QD lasers, a modified growth process enhancing the nucleation of smaller QDs was developed, which allows the emission at the desired wavelength and preserves a high dot density. The influence of growth parameters on the formation of homogenous QDs was investigated. Broad area and ridge waveguide lasers were processed and first material and device results will be presented. A high internal quantum efficiency of 0.8 and a record value in the modal gain of more than 90 cm−1 for a laser with 6 QD layers were obtained, which relates to 15 cm−1 per QD layer. Temperature dependent laser characteristics show best T0 values up to 250 K between 20 and 70 °C.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125761804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930472
Renqiang Zhu, Huaxing Jiang, C. Tang, K. Lau
In this work, we report high-performance GaN quasi-vertical trench MOSFETs grown on cost-effective 6-inch Si substrates. The fabricated GaN trench MOSFETs on Si, with a 2-μm drift layer, show a low specific ON-resistance (RON,sp) of 0.89 mΩ·cm2, a high maximum drain current (ID,max) of 4.1 kA/cm2, a large Vth of 5.1 V and a breakdown voltage (VBR) of 320 V, resulting from the combination of epilayer growth condition tuning and proper electric field management in the device.
{"title":"High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate","authors":"Renqiang Zhu, Huaxing Jiang, C. Tang, K. Lau","doi":"10.1109/CSW55288.2022.9930472","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930472","url":null,"abstract":"In this work, we report high-performance GaN quasi-vertical trench MOSFETs grown on cost-effective 6-inch Si substrates. The fabricated GaN trench MOSFETs on Si, with a 2-μm drift layer, show a low specific ON-resistance (R<inf>ON,sp</inf>) of 0.89 mΩ·cm<sup>2</sup>, a high maximum drain current (I<inf>D,max</inf>) of 4.1 kA/cm<sup>2</sup>, a large V<inf>th</inf> of 5.1 V and a breakdown voltage (V<inf>BR</inf>) of 320 V, resulting from the combination of epilayer growth condition tuning and proper electric field management in the device.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133639735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930380
Riazul Arefin, Seunghyun Lee, Hyemin Jung, J. Ha, Weicheng You, Arnob Ghosh, Md. Saiful Islam Sumon, J. S. Kim, S. Krishna, S. Arafin
Quaternary InAlGaAs/GaAs quantum dots (QDs) were grown to achieve emission at <1 μm and the effects of post-growth thermal annealing on the optical and morphological properties were experimentally investigated. A QD density as high as > 5 × 1010 cm−2 and FWHM of 77 meV at 20 K are achieved for the as-grown QD ensemble. After the rapid thermal annealing (RTA) treatment, remarkable improvements in the optical properties of the QDs are observed as the integrated photoluminescence (PL) intensity improves by a factor of 2 and the FWHM reduces to 29 meV.
{"title":"Effects of Post-growth Thermal Annealing on MBE-grown InAlGaAs/GaAs Quantum Dots","authors":"Riazul Arefin, Seunghyun Lee, Hyemin Jung, J. Ha, Weicheng You, Arnob Ghosh, Md. Saiful Islam Sumon, J. S. Kim, S. Krishna, S. Arafin","doi":"10.1109/CSW55288.2022.9930380","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930380","url":null,"abstract":"Quaternary InAlGaAs/GaAs quantum dots (QDs) were grown to achieve emission at <1 μm and the effects of post-growth thermal annealing on the optical and morphological properties were experimentally investigated. A QD density as high as > 5 × 1010 cm−2 and FWHM of 77 meV at 20 K are achieved for the as-grown QD ensemble. After the rapid thermal annealing (RTA) treatment, remarkable improvements in the optical properties of the QDs are observed as the integrated photoluminescence (PL) intensity improves by a factor of 2 and the FWHM reduces to 29 meV.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115995737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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