S. Stockman, A. Kim, M. Misra, P. Grillot, L. Cook, S. Watanabe, R. Mann, L. Hudson, W. Gotz, M. Krames, D. Steigerwald, P. S. Martin, F. Wall, F. Steranka
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引用次数: 1
Abstract
We review the current state-of-the-art in high-power (>1 W) GaN LED technology, and highlight current challenges in MOCVD epitaxy, device design, and high-volume manufacturing. We also describe recent developments in technology for high-power GaN-based LEDs which are operated beyond 5 W/LED with high efficiency (50 lm/W green, >30 lm/W white) and excellent reliability, and preview future challenges in solid state lighting and display applications.
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