Mikael Östling, Sang-Mo Koo, S. Lee, E. Danielsson, M. Domeij, C. Zetterling
{"title":"SiC device technology for high voltage and RF power applications","authors":"Mikael Östling, Sang-Mo Koo, S. Lee, E. Danielsson, M. Domeij, C. Zetterling","doi":"10.1109/MIEL.2002.1003145","DOIUrl":null,"url":null,"abstract":"Recently, silicon carbide (SiC) has drawn considerable attention as a suitable semiconductor material for high power, high frequency, high temperature and radiation resistant devices. The commercialized substrates and the experimental device prototypes in SiC show the promises while the continued improvements in fabrication techniques are required for economically viable productions to be widespread. This paper reviews the progress and current issues in SiC device process technology and the state-of-the art SiC devices for high voltage and RF power applications.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Recently, silicon carbide (SiC) has drawn considerable attention as a suitable semiconductor material for high power, high frequency, high temperature and radiation resistant devices. The commercialized substrates and the experimental device prototypes in SiC show the promises while the continued improvements in fabrication techniques are required for economically viable productions to be widespread. This paper reviews the progress and current issues in SiC device process technology and the state-of-the art SiC devices for high voltage and RF power applications.
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