{"title":"Theoretical analysis of XtreMOS™ power transistors","authors":"J. Roig, B. Desoete, P. Moens, M. Tack","doi":"10.1109/ESSDERC.2007.4430968","DOIUrl":null,"url":null,"abstract":"This work provides a new theoretical approach addressed to the XtreMOSTM and equivalent structures. An analytical sRonxBVdss model is provided to demonstrate the superior electrical performance of XtreMOSTM structure in the domain of the high power MOSFETs at medium voltage capability (50-200 V). Moreover, geometrical and technological parameters can be easily optimized by means of simple expressions. In order to support and validate the theoretical approach, numerical simulation and experimental data are included.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
This work provides a new theoretical approach addressed to the XtreMOSTM and equivalent structures. An analytical sRonxBVdss model is provided to demonstrate the superior electrical performance of XtreMOSTM structure in the domain of the high power MOSFETs at medium voltage capability (50-200 V). Moreover, geometrical and technological parameters can be easily optimized by means of simple expressions. In order to support and validate the theoretical approach, numerical simulation and experimental data are included.
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