{"title":"A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks","authors":"J. R. Lopera, M. Gadringer, E. Leitgeb, W. Bösch","doi":"10.1109/CoBCom49975.2020.9174184","DOIUrl":null,"url":null,"abstract":"In this paper we are presenting a power amplifier based on an RF power LDMOS transistor at 2.1 GHz with a bandwidth of 700 MHz implementing broadband impedance matching networks (BIMN) in band-pass form. The device parasitics modelled as a series RLC structure are absorbed in the input and output matching networks by proper design of matching networks in band-pass form using two different synthesis methodologies. The S21 of the amplifier shows 11.2 dB of maximum small signal gain with 2.4 dB ripple along a 700 MHz bandwidth at 2.1 GHz and S11 better than −7dB for 1. 64-2.34GHz. The band-pass matching networks are entirely designed by transmission lines modeling the behavior of the resonant parallel shunt and series LC structures that characterize a band-pass circuit. The amplifier should be able to deliver 1W of maximum output power at saturation.","PeriodicalId":442802,"journal":{"name":"2020 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications (CoBCom)","volume":"38 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications (CoBCom)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CoBCom49975.2020.9174184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper we are presenting a power amplifier based on an RF power LDMOS transistor at 2.1 GHz with a bandwidth of 700 MHz implementing broadband impedance matching networks (BIMN) in band-pass form. The device parasitics modelled as a series RLC structure are absorbed in the input and output matching networks by proper design of matching networks in band-pass form using two different synthesis methodologies. The S21 of the amplifier shows 11.2 dB of maximum small signal gain with 2.4 dB ripple along a 700 MHz bandwidth at 2.1 GHz and S11 better than −7dB for 1. 64-2.34GHz. The band-pass matching networks are entirely designed by transmission lines modeling the behavior of the resonant parallel shunt and series LC structures that characterize a band-pass circuit. The amplifier should be able to deliver 1W of maximum output power at saturation.
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