Physical Modeling of Quasi-ballistic GaN HEMTs Operating at Cryogenic Temperatures

Kexin Li, S. Rakheja
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Abstract

This abstract presents a physical model to describe the current-voltage response of quasi-ballistic GaN HEMTs operating at ultra-low temperatures up to the cryogenic limit (4.2 K). The model includes various sources of carrier scatterings, such as due to interface roughness and phonons, as well as the temperature-dependent thermal conductivity of the heterostructure to make realistic assessments of the merits of GaN technology at ultra-low temperatures. The model is validated in the temperature range of 77 K to 300 K using a judicious mix of measurement data and technology computer-aided design (TCAD) simulations. The model is further applied to predict the device’s I–V curves, transconductance, and cut-off frequency at 4.2 K over a broad bias range. The model presented here offers critical insights into the role of temperature and heterostructure design of GaN HEMTs when used in an extremely low-temperature environment. Additionally, the model can be integrated into a circuit simulation framework to facilitate the design of cryogenic GaN-based control circuitry that can be interfaced with quantum computing hardware.
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低温下准弹道GaN hemt的物理建模
本文提出了一个物理模型来描述准弹道GaN hemt在超低温下工作的电流电压响应,达到低温极限(4.2 K)。该模型包括各种载流子散射源,例如由于界面粗糙度和声子,以及异质结构的温度相关热导率,以便对GaN技术在超低温下的优点进行现实评估。利用测量数据和计算机辅助设计(TCAD)模拟技术,在77 K至300 K的温度范围内对模型进行了验证。该模型进一步应用于预测器件在4.2 K宽偏置范围内的I-V曲线、跨导和截止频率。本文提出的模型为在极低温环境中使用GaN hemt时温度和异质结构设计的作用提供了关键见解。此外,该模型可以集成到电路仿真框架中,以方便设计可与量子计算硬件接口的基于低温氮化镓的控制电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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