{"title":"Physical Modeling of Quasi-ballistic GaN HEMTs Operating at Cryogenic Temperatures","authors":"Kexin Li, S. Rakheja","doi":"10.1109/CSW55288.2022.9930446","DOIUrl":null,"url":null,"abstract":"This abstract presents a physical model to describe the current-voltage response of quasi-ballistic GaN HEMTs operating at ultra-low temperatures up to the cryogenic limit (4.2 K). The model includes various sources of carrier scatterings, such as due to interface roughness and phonons, as well as the temperature-dependent thermal conductivity of the heterostructure to make realistic assessments of the merits of GaN technology at ultra-low temperatures. The model is validated in the temperature range of 77 K to 300 K using a judicious mix of measurement data and technology computer-aided design (TCAD) simulations. The model is further applied to predict the device’s I–V curves, transconductance, and cut-off frequency at 4.2 K over a broad bias range. The model presented here offers critical insights into the role of temperature and heterostructure design of GaN HEMTs when used in an extremely low-temperature environment. Additionally, the model can be integrated into a circuit simulation framework to facilitate the design of cryogenic GaN-based control circuitry that can be interfaced with quantum computing hardware.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This abstract presents a physical model to describe the current-voltage response of quasi-ballistic GaN HEMTs operating at ultra-low temperatures up to the cryogenic limit (4.2 K). The model includes various sources of carrier scatterings, such as due to interface roughness and phonons, as well as the temperature-dependent thermal conductivity of the heterostructure to make realistic assessments of the merits of GaN technology at ultra-low temperatures. The model is validated in the temperature range of 77 K to 300 K using a judicious mix of measurement data and technology computer-aided design (TCAD) simulations. The model is further applied to predict the device’s I–V curves, transconductance, and cut-off frequency at 4.2 K over a broad bias range. The model presented here offers critical insights into the role of temperature and heterostructure design of GaN HEMTs when used in an extremely low-temperature environment. Additionally, the model can be integrated into a circuit simulation framework to facilitate the design of cryogenic GaN-based control circuitry that can be interfaced with quantum computing hardware.