Patterning of Functional Materials by Pulsed Laser Deposition through Nanostencils

C. Cojocaru, C. Harnagea, A. Pignolet, F. Rosei
{"title":"Patterning of Functional Materials by Pulsed Laser Deposition through Nanostencils","authors":"C. Cojocaru, C. Harnagea, A. Pignolet, F. Rosei","doi":"10.1109/NANOEL.2006.1609730","DOIUrl":null,"url":null,"abstract":"We present how various features drawn in a miniature shadow-mask (nanostencil) can be efficiently transferred to a surface in the form of 3D nanostructures of metals (Pt, Cr), semiconductors (Ge) or complex oxides (e.g. BaTiO3) by room temperature pulsed laser deposition (PLD) and stenciling. Using the proposed method, there is no aggressive interaction with the substrate, but selective deposition of the material by simply interposing a sieve with apertures down to 100 nm between the deposition source and the substrate. Nanostenciling allows organizing the structures in given architectures, with high accuracy, while reducing drastically the number of processes present in resist-based lithography. The material deposited through the stencil mask conserves the desired functionality even at the level of the individual nanostructures. The patterning process is simple and rapid since it is not implying additional processing steps to the deposition process; it is also parallel, resist-less and without interfering with the structures natural growth dynamics. Nanostenciling can be performed in high or ultra high vacuum and is suitable for parallel prototyping of fragile or functionalized surfaces.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANOEL.2006.1609730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

We present how various features drawn in a miniature shadow-mask (nanostencil) can be efficiently transferred to a surface in the form of 3D nanostructures of metals (Pt, Cr), semiconductors (Ge) or complex oxides (e.g. BaTiO3) by room temperature pulsed laser deposition (PLD) and stenciling. Using the proposed method, there is no aggressive interaction with the substrate, but selective deposition of the material by simply interposing a sieve with apertures down to 100 nm between the deposition source and the substrate. Nanostenciling allows organizing the structures in given architectures, with high accuracy, while reducing drastically the number of processes present in resist-based lithography. The material deposited through the stencil mask conserves the desired functionality even at the level of the individual nanostructures. The patterning process is simple and rapid since it is not implying additional processing steps to the deposition process; it is also parallel, resist-less and without interfering with the structures natural growth dynamics. Nanostenciling can be performed in high or ultra high vacuum and is suitable for parallel prototyping of fragile or functionalized surfaces.
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脉冲激光沉积纳米模板功能材料的图案化研究
我们展示了如何通过室温脉冲激光沉积(PLD)和模印,以金属(Pt, Cr),半导体(Ge)或复杂氧化物(例如BaTiO3)的3D纳米结构的形式有效地将在微型阴影掩膜(纳米模板)中绘制的各种特征转移到表面。使用所提出的方法,没有与衬底的侵略性相互作用,而是通过简单地在沉积源和衬底之间插入孔径低至100 nm的筛子来选择性沉积材料。纳米网孔允许在给定的架构中组织结构,具有很高的精度,同时大大减少了电阻基光刻中存在的工艺数量。通过模板掩膜沉积的材料即使在单个纳米结构的水平上也保留了所需的功能。图案化过程是简单和快速的,因为它不意味着额外的处理步骤沉积过程;它也是平行的,无阻力的,不干扰结构的自然生长动态。纳米模板可以在高真空或超高真空中进行,适用于易碎或功能化表面的平行原型制作。
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