{"title":"Emitter polysilicon process optimization by RGA and process proposal for interfacial oxide growth using ozonated water","authors":"C. Willis, P. Foglietti, J. Artinger","doi":"10.1109/ISSM.2001.962973","DOIUrl":null,"url":null,"abstract":"A residual gas analyzer (RGA) has been employed to analyse trace gases in a LPCVD polysilicon reactor used for emitter polysilicon process. Process steps leading up to this oxidation have been characterized in terms of water and oxygen partial pressure. An alternative process of an ozonated water rinse in the preceding wet clean is proposed in order to grow a stable and reliable ultra-thin layer of chemical oxide.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A residual gas analyzer (RGA) has been employed to analyse trace gases in a LPCVD polysilicon reactor used for emitter polysilicon process. Process steps leading up to this oxidation have been characterized in terms of water and oxygen partial pressure. An alternative process of an ozonated water rinse in the preceding wet clean is proposed in order to grow a stable and reliable ultra-thin layer of chemical oxide.
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