Design and fabrication of Schottky diode, on-chip RF power detector

W. Jeon, John C. Rodgers, J. Melngailis
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引用次数: 32

Abstract

Schottky diodes are fast rectifying devices and can be used as RF power detectors. In this article we designed a mask set for fabricating Schottky diodes with reduced contact size and minimum series resistance between the n and n+ regions. Processing steps used are: patterning of SiO/sub 2/, n/sup +/ activation by rapid thermal annealing, e-beam Al deposition, and Al patterning. After fabricating the diodes, RF power detecting characteristics are measured by directly irradiating chips with RF power. In some cases, we also injected power by contact probes.
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肖特基二极管、片上射频功率检测器的设计与制造
肖特基二极管是一种快速整流器件,可以用作射频功率检测器。在本文中,我们设计了一个掩模组,用于制造具有减小接触尺寸和最小串联电阻之间的n和n+区域的肖特基二极管。使用的加工步骤是:SiO/sub 2/图案化,快速热退火的n/sup +/活化,电子束Al沉积和Al图案化。二极管制作完成后,通过射频功率直接照射芯片,测量射频功率检测特性。在某些情况下,我们也通过接触探针注入能量。
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