Acomprehensive compact SCR model for CDM ESD circuit simulation

L. Lou, J. Liou
{"title":"Acomprehensive compact SCR model for CDM ESD circuit simulation","authors":"L. Lou, J. Liou","doi":"10.1109/RELPHY.2008.4558963","DOIUrl":null,"url":null,"abstract":"We have presented a comprehensive SCR compact model for CDM simulation. The work illustrated the useful and effective macromodeling approach of integrating the various industry standard models to describe the different devices imbedded in the SCR and treating the CDM-relevant operation states. In additional to the prediction of TLP results, the presented model demonstrates the effectiveness in analyzing CDM response of the I/O circuits and successfully explains why the input pins have lower CDM robustness than the output pins.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558963","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We have presented a comprehensive SCR compact model for CDM simulation. The work illustrated the useful and effective macromodeling approach of integrating the various industry standard models to describe the different devices imbedded in the SCR and treating the CDM-relevant operation states. In additional to the prediction of TLP results, the presented model demonstrates the effectiveness in analyzing CDM response of the I/O circuits and successfully explains why the input pins have lower CDM robustness than the output pins.
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用于CDM ESD电路仿真的综合紧凑SCR模型
我们提出了一个全面的用于CDM模拟的SCR紧凑模型。该工作说明了整合各种工业标准模型来描述嵌入在SCR中的不同器件和处理cdm相关运行状态的有用和有效的宏观建模方法。除了对TLP结果的预测外,该模型还证明了分析I/O电路的CDM响应的有效性,并成功地解释了为什么输入引脚比输出引脚具有更低的CDM鲁棒性。
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