L. La Spina, L. Nanver, H. Schellevis, E. Iborra, M. Clement, J. Olivares
{"title":"Characterization of PVD aluminum nitride for heat spreading in RF IC's","authors":"L. La Spina, L. Nanver, H. Schellevis, E. Iborra, M. Clement, J. Olivares","doi":"10.1109/ESSDERC.2007.4430951","DOIUrl":null,"url":null,"abstract":"Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 mum, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 mum, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
