A. Taeb, S. Gigoyan, M. Basha, S. Chaudhuri, S. Safavi-Naeini
{"title":"A Novel Wide-Band Finger-Shaped Phase Shifter on Silicon-On-Glass (SOG) Technology for Sub-Millimeter Wave and Terahertz Applications","authors":"A. Taeb, S. Gigoyan, M. Basha, S. Chaudhuri, S. Safavi-Naeini","doi":"10.23919/EuMIC.2019.8909679","DOIUrl":null,"url":null,"abstract":"This paper presents a novel approach to realize a low-cost and wide-band phase shifter structure operating over 150-190 GHz range of frequencies. The proposed finger-shaped phase shifter is implemented based on a newly developed integrated Silicon-On-Glass (SOG) technology. The phase shifting mechanism is achieved by moving a finger-shaped High Conductivity Silicon (HCS) section over the High Resistivity Silicon (HRS) waveguide, using a micro-positioner. Perturbing the silicon waveguide field causes phase shift. The experimental results indicates the proposed SOG finger-shaped phase shifter provides the averages of 15.6 degree/wavelength phase shift and 1.38 dB/wavelength added loss, respectively, over 150-190 GHz range of frequencies.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909679","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a novel approach to realize a low-cost and wide-band phase shifter structure operating over 150-190 GHz range of frequencies. The proposed finger-shaped phase shifter is implemented based on a newly developed integrated Silicon-On-Glass (SOG) technology. The phase shifting mechanism is achieved by moving a finger-shaped High Conductivity Silicon (HCS) section over the High Resistivity Silicon (HRS) waveguide, using a micro-positioner. Perturbing the silicon waveguide field causes phase shift. The experimental results indicates the proposed SOG finger-shaped phase shifter provides the averages of 15.6 degree/wavelength phase shift and 1.38 dB/wavelength added loss, respectively, over 150-190 GHz range of frequencies.