{"title":"Negative differential resistance in silicon-molecule heterostructure","authors":"T. Rakshit, G. Liang, Avik W. Ghosh, S. Datta","doi":"10.1109/ISDRS.2003.1272064","DOIUrl":null,"url":null,"abstract":"This paper demonstrates the negative differential resistance in silicon-molecule heterostructure. The NDR is expected to occur in the positive bias direction for molecules on degenerately doped p-type silicon substrates and in the negative bias direction for degenerately doped n-type substrates.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper demonstrates the negative differential resistance in silicon-molecule heterostructure. The NDR is expected to occur in the positive bias direction for molecules on degenerately doped p-type silicon substrates and in the negative bias direction for degenerately doped n-type substrates.
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