Enhancement of THz emission from semiconductor devices

A. Dowd, M. Johnston, D. Whittaker, A. Davies, E. Linfield
{"title":"Enhancement of THz emission from semiconductor devices","authors":"A. Dowd, M. Johnston, D. Whittaker, A. Davies, E. Linfield","doi":"10.1109/COMMAD.2002.1237246","DOIUrl":null,"url":null,"abstract":"We have studied the emission of coherent terahertz (THz) frequency electromagnetic pulses from semiconductor surfaces. Collimated beams of THz radiation are observed from surface-field emitters and the efficiency of these emitters is shown to be improved by (a) modifying the effective refractive index at the surface of the emitter and (b) reorienting the THz dipole with respect to the surface. A /spl sim/ 20/spl times/ enhancement in emitted THz power was seen in a GaAs/InAs prism emitter.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"1037 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We have studied the emission of coherent terahertz (THz) frequency electromagnetic pulses from semiconductor surfaces. Collimated beams of THz radiation are observed from surface-field emitters and the efficiency of these emitters is shown to be improved by (a) modifying the effective refractive index at the surface of the emitter and (b) reorienting the THz dipole with respect to the surface. A /spl sim/ 20/spl times/ enhancement in emitted THz power was seen in a GaAs/InAs prism emitter.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
半导体器件太赫兹辐射的增强
我们研究了从半导体表面发射的相干太赫兹(THz)频率电磁脉冲。从表面场发射体中观测到太赫兹辐射的准直光束,这些发射体的效率通过(a)修改发射体表面的有效折射率和(b)相对于表面重新定向太赫兹偶极子而得到改善。在GaAs/InAs棱镜发射器中,发射的太赫兹功率增加了1 /spl / sim/ 20/spl倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Integrated fabrication of InGaP/GaAs /spl delta/-doped heterojunction bipolar transistor and doped-channel field effect transistor Micro fluxgate sensor using solenoid driving and sensing coils Minimisation of P surface segregation during epitaxial silicon growth for the fabrication of a silicon-based quantum computer Characterisation of Ti:sapphire layers synthesized energy ion implantation Impact of deposition parameters on the characterizations of highly orientated aluminum nitride for film bulk acoustic wave resonator device
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1