Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237277
Jiayi Huang, T.P. Chen, M. S. Tse
This paper reports a comprehensive study of the edge charge trapping in the gate oxide overlapping the drain extension caused by Fowler-Nordheim (FN) injection and hot-carrier injection. In this study the edge charge trapping was determined by using a novel approach to analyze the change of the band-to-band tunneling current measured with a three-terminal gate-controlled-diode (GCD) configuration. It was found that both the FN injection (positive or negative) and hot-carrier injection led to positive edge charge trapping. On the other hand, a power-law dependence of the edge charge trapping on the stress time was always observed for all the cases. These results clearly show that the edge charge trapping has no strong dependence on the injection types and the injection polarities.
{"title":"Study of edge charge trapping in gate oxide caused by FN and hot-carrier injection","authors":"Jiayi Huang, T.P. Chen, M. S. Tse","doi":"10.1109/COMMAD.2002.1237277","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237277","url":null,"abstract":"This paper reports a comprehensive study of the edge charge trapping in the gate oxide overlapping the drain extension caused by Fowler-Nordheim (FN) injection and hot-carrier injection. In this study the edge charge trapping was determined by using a novel approach to analyze the change of the band-to-band tunneling current measured with a three-terminal gate-controlled-diode (GCD) configuration. It was found that both the FN injection (positive or negative) and hot-carrier injection led to positive edge charge trapping. On the other hand, a power-law dependence of the edge charge trapping on the stress time was always observed for all the cases. These results clearly show that the edge charge trapping has no strong dependence on the injection types and the injection polarities.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129479545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237246
A. Dowd, M. Johnston, D. Whittaker, A. Davies, E. Linfield
We have studied the emission of coherent terahertz (THz) frequency electromagnetic pulses from semiconductor surfaces. Collimated beams of THz radiation are observed from surface-field emitters and the efficiency of these emitters is shown to be improved by (a) modifying the effective refractive index at the surface of the emitter and (b) reorienting the THz dipole with respect to the surface. A /spl sim/ 20/spl times/ enhancement in emitted THz power was seen in a GaAs/InAs prism emitter.
{"title":"Enhancement of THz emission from semiconductor devices","authors":"A. Dowd, M. Johnston, D. Whittaker, A. Davies, E. Linfield","doi":"10.1109/COMMAD.2002.1237246","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237246","url":null,"abstract":"We have studied the emission of coherent terahertz (THz) frequency electromagnetic pulses from semiconductor surfaces. Collimated beams of THz radiation are observed from surface-field emitters and the efficiency of these emitters is shown to be improved by (a) modifying the effective refractive index at the surface of the emitter and (b) reorienting the THz dipole with respect to the surface. A /spl sim/ 20/spl times/ enhancement in emitted THz power was seen in a GaAs/InAs prism emitter.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"1037 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116270289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237280
E. Cho, M. Green, J. Xia, R. Corkish
Thermal oxidation of a silicon-on-insulator (SOI) substrate gives evidence that an ordered silicon oxide structure exists on the upper, thermally oxidised SiO/sub 2/-Si interface. The ordered structure of silicon oxide was observed by transmission electron microscopy (TEM) in samples of thin monocrystalline Si film less than 3 nm thick encased by thermal SiO/sub 2/. Based on TEM measurement, the ordered silicon oxide has 1.9 A/spl ring/ spacing along the [110] direction of the Si structure and 17 A/spl ring/ thickness along the (100) direction of the Si structure. Its existence may be related to the fact that the silicon layers were very thin, which may have influenced factors such as their pliancy, since ordered oxide phases were not observed on our samples with silicon layers thicker than 3 nm.
{"title":"Evidence for crystalline silicon oxide growth on thin silicon","authors":"E. Cho, M. Green, J. Xia, R. Corkish","doi":"10.1109/COMMAD.2002.1237280","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237280","url":null,"abstract":"Thermal oxidation of a silicon-on-insulator (SOI) substrate gives evidence that an ordered silicon oxide structure exists on the upper, thermally oxidised SiO/sub 2/-Si interface. The ordered structure of silicon oxide was observed by transmission electron microscopy (TEM) in samples of thin monocrystalline Si film less than 3 nm thick encased by thermal SiO/sub 2/. Based on TEM measurement, the ordered silicon oxide has 1.9 A/spl ring/ spacing along the [110] direction of the Si structure and 17 A/spl ring/ thickness along the (100) direction of the Si structure. Its existence may be related to the fact that the silicon layers were very thin, which may have influenced factors such as their pliancy, since ordered oxide phases were not observed on our samples with silicon layers thicker than 3 nm.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126333254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237187
J. Campbell, Shuling Wang, Xiaoguang G. Zheng, Xioawei Li, Ning Li, F. Ma, Xiaoguang Sun, J. B. Hurst, R. Sidhu, A. Holmes, A. Huntington, L. Coldren
This paper surveys recent work in several photodetector areas including high-speed, low-noise avalanche photodiodes, solar-blind ultra-violet PIN photodiodes, and quantum dot infrared photodetectors (QDIPs).
{"title":"Recent developments in avalanche photodiodes","authors":"J. Campbell, Shuling Wang, Xiaoguang G. Zheng, Xioawei Li, Ning Li, F. Ma, Xiaoguang Sun, J. B. Hurst, R. Sidhu, A. Holmes, A. Huntington, L. Coldren","doi":"10.1109/COMMAD.2002.1237187","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237187","url":null,"abstract":"This paper surveys recent work in several photodetector areas including high-speed, low-noise avalanche photodiodes, solar-blind ultra-violet PIN photodiodes, and quantum dot infrared photodetectors (QDIPs).","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126494606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237226
P. Duncan, S. Hinckley, E. Gluszak, N. Dytlewski
Polycrystalline CdS thin films, ranging in thickness from 30 to 200 nm, have been chemically deposited onto glass substrates using an ammonia-cadmium-thiourea reaction solution. Using proton-induced X-ray emission and atomic force microscopy, these film's elemental composition, thickness and microstructure have been examined. Analysis indicates that there is a distinct change from the continuous phase deposition to a particulate phase deposition and that these two different phases produce layers of CdS with different densities. Because of this change in density the point where the particulate CdS phase becomes the dominant deposition process can be identified. A mechanism is proposed to explain this difference in film densities.
{"title":"Investigation of growth phases of chemical bath deposited CdS thin films","authors":"P. Duncan, S. Hinckley, E. Gluszak, N. Dytlewski","doi":"10.1109/COMMAD.2002.1237226","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237226","url":null,"abstract":"Polycrystalline CdS thin films, ranging in thickness from 30 to 200 nm, have been chemically deposited onto glass substrates using an ammonia-cadmium-thiourea reaction solution. Using proton-induced X-ray emission and atomic force microscopy, these film's elemental composition, thickness and microstructure have been examined. Analysis indicates that there is a distinct change from the continuous phase deposition to a particulate phase deposition and that these two different phases produce layers of CdS with different densities. Because of this change in density the point where the particulate CdS phase becomes the dominant deposition process can be identified. A mechanism is proposed to explain this difference in film densities.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133860756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237237
J. Coleman, R. Swint, T. Yeoh, V. Elarde
Using metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE) it is possible to grow different layer thicknesses and compositions on different areas of a wafer in a single growth step. This makes possible the integration of discrete devices and enables the fabrication of advanced devices.
{"title":"Selective area epitaxy for photonic integrated circuits and advanced devices","authors":"J. Coleman, R. Swint, T. Yeoh, V. Elarde","doi":"10.1109/COMMAD.2002.1237237","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237237","url":null,"abstract":"Using metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE) it is possible to grow different layer thicknesses and compositions on different areas of a wafer in a single growth step. This makes possible the integration of discrete devices and enables the fabrication of advanced devices.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"368 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131493199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237243
W. Chen, Y. Wang, C. Chen, H. Diao, X. Liao, G. Kong, C. Hsu
In this study, silicon nanocrystals embedded in SiO/sub 2/ matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250 /spl deg/C to RT, the PL intensity increases by two orders of magnitude.
{"title":"Strong red light emission from silicon nanocrystals embedded in SiO/sub 2/ matrix","authors":"W. Chen, Y. Wang, C. Chen, H. Diao, X. Liao, G. Kong, C. Hsu","doi":"10.1109/COMMAD.2002.1237243","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237243","url":null,"abstract":"In this study, silicon nanocrystals embedded in SiO/sub 2/ matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250 /spl deg/C to RT, the PL intensity increases by two orders of magnitude.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"12 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132934945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237309
S. Ippolito, K. Kalantar-zadeh, D. Powell, W. Wlodarski
Layered Surface Acoustic Wave (SAW) transducers were fabricated and modelled by finite-element method. A comparison of the frequency response of the measured devices and simulated structures are presented. The transducer structure is based on a two-port delay line, employing x-cut, y-propagating lithium niobate (LiNbO/sub 3/) substrate and a thin film zinc oxide (ZnO) guiding layer. A finite-element approach was employed to simulate a 3-dimensional version of the fabricated device. A transient analysis was conducted, where electrical and mechanical boundary values were applied. Simulation results show good agreement with experimental results, indicating that a finite-element approach is appropriate for modelling layered SAW transducers.
{"title":"A finite element approach for 3-dimensional simulation of layered acoustic wave transducers","authors":"S. Ippolito, K. Kalantar-zadeh, D. Powell, W. Wlodarski","doi":"10.1109/COMMAD.2002.1237309","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237309","url":null,"abstract":"Layered Surface Acoustic Wave (SAW) transducers were fabricated and modelled by finite-element method. A comparison of the frequency response of the measured devices and simulated structures are presented. The transducer structure is based on a two-port delay line, employing x-cut, y-propagating lithium niobate (LiNbO/sub 3/) substrate and a thin film zinc oxide (ZnO) guiding layer. A finite-element approach was employed to simulate a 3-dimensional version of the fabricated device. A transient analysis was conducted, where electrical and mechanical boundary values were applied. Simulation results show good agreement with experimental results, indicating that a finite-element approach is appropriate for modelling layered SAW transducers.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"48 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130751007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237253
T. Mei, H. Djie, C. Sookdhis, J. Arokiaraj
The inductively coupled plasma enhanced quantum well intermixing (ICP-QWI) technology has been well established for tuning the bandgap of quantum well structure using argon plasma. This technology provides effective bandgap tuning capability (e.g., with quantum well bandgap shift as large as 104 nm in quantum well laser structure in InP substrate [1]), which is competent for implementing photonic integration. A differential bandgap shift of 86 nm with very small differential linewidth broadening of /spl sim/3 /spl Aring/ was obtained by applying selective intermixing using SiO/sub 2/ mask layer. Photonics integration capability was demonstrated by the fabrication of the broad area extended cavity lasers and the fabricated passive waveguide has a measured loss of 2.98 cm/sup -1/.
{"title":"Low-loss waveguide fabrication using inductively coupled argon plasma enhanced quantum well intermixing in InP quantum well sample","authors":"T. Mei, H. Djie, C. Sookdhis, J. Arokiaraj","doi":"10.1109/COMMAD.2002.1237253","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237253","url":null,"abstract":"The inductively coupled plasma enhanced quantum well intermixing (ICP-QWI) technology has been well established for tuning the bandgap of quantum well structure using argon plasma. This technology provides effective bandgap tuning capability (e.g., with quantum well bandgap shift as large as 104 nm in quantum well laser structure in InP substrate [1]), which is competent for implementing photonic integration. A differential bandgap shift of 86 nm with very small differential linewidth broadening of /spl sim/3 /spl Aring/ was obtained by applying selective intermixing using SiO/sub 2/ mask layer. Photonics integration capability was demonstrated by the fabrication of the broad area extended cavity lasers and the fabricated passive waveguide has a measured loss of 2.98 cm/sup -1/.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133095751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237220
J. Ning, R.K. Sharma, Feng Hanhua, Wang Zhe, S. Xu
AlN thin films were grown on Si(100) and Al/Si(100) substrates by pulsed dc sputtering system using 99.999% purity aluminum as target, and Ar+N/sub 2/ gas mixture as precursor. The impact of deposition parameters, including dc power, deposition pressure and substrate temperature, on material properties has been investigated. A good correlation between film crystallinity and dc power, as well as gas pressure, was addressed by X-ray diffraction, and verified by scanning electron microscope (SEM) and ellipsometry. It is found that highly c-axis oriented h-AlN can be obtained at low gas pressure and low deposition rate. For AlN on Al/Si(100) substrate, micro-crack was observed, which was assigned to the large thermal stress between AlN film and Al layer. Crack-free surface has been achieved by reducing the deposition temperature. The deposition mechanism of AlN deposition is discussed. This work provides a material foundation for film bulk wave resonator (FBAR) devices fabrication.
{"title":"Impact of deposition parameters on the characterizations of highly orientated aluminum nitride for film bulk acoustic wave resonator device","authors":"J. Ning, R.K. Sharma, Feng Hanhua, Wang Zhe, S. Xu","doi":"10.1109/COMMAD.2002.1237220","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237220","url":null,"abstract":"AlN thin films were grown on Si(100) and Al/Si(100) substrates by pulsed dc sputtering system using 99.999% purity aluminum as target, and Ar+N/sub 2/ gas mixture as precursor. The impact of deposition parameters, including dc power, deposition pressure and substrate temperature, on material properties has been investigated. A good correlation between film crystallinity and dc power, as well as gas pressure, was addressed by X-ray diffraction, and verified by scanning electron microscope (SEM) and ellipsometry. It is found that highly c-axis oriented h-AlN can be obtained at low gas pressure and low deposition rate. For AlN on Al/Si(100) substrate, micro-crack was observed, which was assigned to the large thermal stress between AlN film and Al layer. Crack-free surface has been achieved by reducing the deposition temperature. The deposition mechanism of AlN deposition is discussed. This work provides a material foundation for film bulk wave resonator (FBAR) devices fabrication.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114563303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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