{"title":"Energy distribution and electrical characteristics of NBTI induced Si/SiON interface states","authors":"D. Ang, G. Du, Y.Z. Hu, S. Wang, C. Ng","doi":"10.1109/RELPHY.2008.4559014","DOIUrl":null,"url":null,"abstract":"Evidence from negative-bias temperature stressing of both p- and n-MOSFET employing the ultra-thin (15 Aring) plasma-nitrided gate dielectric shows that stress induced Si/SiON interface states have (1) a bipolar, i.e. both acceptor- and donor-like, characteristic in the upper-half of the Si bandgap and (2) a donor-like characteristic in the lower-half of the Si bandgap. During Id-Vg measurement of the p-MOSFET, interface states above mid-gap behave like ldquopositive oxide trapped chargerdquo, resulting in a negative shift of the subthreshold I-V curve of the p-MOSFET. On the other hand, a change in charge state from positive-to-negative, during positive gate bias sweep, results in a significant ldquostretch-outrdquo of the n-MOSFET subthreshold I-V curve. As a consequence of this bipolar charge-state transition, stress induced interface state density extracted from subthreshold swing degradation of the n-MOSFET is consistently ~2times that obtained from the increase in the charge pumping current.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4559014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Evidence from negative-bias temperature stressing of both p- and n-MOSFET employing the ultra-thin (15 Aring) plasma-nitrided gate dielectric shows that stress induced Si/SiON interface states have (1) a bipolar, i.e. both acceptor- and donor-like, characteristic in the upper-half of the Si bandgap and (2) a donor-like characteristic in the lower-half of the Si bandgap. During Id-Vg measurement of the p-MOSFET, interface states above mid-gap behave like ldquopositive oxide trapped chargerdquo, resulting in a negative shift of the subthreshold I-V curve of the p-MOSFET. On the other hand, a change in charge state from positive-to-negative, during positive gate bias sweep, results in a significant ldquostretch-outrdquo of the n-MOSFET subthreshold I-V curve. As a consequence of this bipolar charge-state transition, stress induced interface state density extracted from subthreshold swing degradation of the n-MOSFET is consistently ~2times that obtained from the increase in the charge pumping current.