Q.W. Pen, van den Aj Berg, L.K. Nanvpr, J. Slabbekoorn, C. Visser
{"title":"Low-ohmic contacts by excimer laser annealing of implanted polysilicon","authors":"Q.W. Pen, van den Aj Berg, L.K. Nanvpr, J. Slabbekoorn, C. Visser","doi":"10.1109/ICSICT.1998.785811","DOIUrl":null,"url":null,"abstract":"High power excimer laser annealing is used to activate dopants implanted in polysilicon layers. Sheet resistances as low os 50 /spl Omega///spl square/ are achieved for thin polysilicon layers on oxide, and low ohmic contacts have been produced to implanted junctions elevated by a polysilicon layer. The influence of the thickness of either the poly or the underlying oxide is evaluated.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785811","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High power excimer laser annealing is used to activate dopants implanted in polysilicon layers. Sheet resistances as low os 50 /spl Omega///spl square/ are achieved for thin polysilicon layers on oxide, and low ohmic contacts have been produced to implanted junctions elevated by a polysilicon layer. The influence of the thickness of either the poly or the underlying oxide is evaluated.
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