{"title":"A 5-10 GHz octave-band AlGaAs/GaAs HBT down-converter MMIC","authors":"K. Kobayashi, R. Kasody, A. Oki","doi":"10.1109/GAAS.1995.529005","DOIUrl":null,"url":null,"abstract":"This work describes an X-band HBT down-converter MMIC which integrates a double double-balanced Schottky mixer and 5 stages of HBT amplification to achieve >30 dB conversion gain and an IP3 as high as 15 dBm with an RF bandwidth from 5-10 GHz. A novel HBT amplifier gain cell employing active feedback which provides wide bandwidth and high performance in a compact area is used for the RF, LO, and IF amplifier stages. The MMIC is realized in a 3.6/spl times/3.4 mm/sup 2/ area, consumes 530 mW, and is self-biased through a 6 V supply. This MMIC represents the highest complexity X-band down-converter MMIC demonstration based on GaAs HBT and Schottky technology.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.529005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This work describes an X-band HBT down-converter MMIC which integrates a double double-balanced Schottky mixer and 5 stages of HBT amplification to achieve >30 dB conversion gain and an IP3 as high as 15 dBm with an RF bandwidth from 5-10 GHz. A novel HBT amplifier gain cell employing active feedback which provides wide bandwidth and high performance in a compact area is used for the RF, LO, and IF amplifier stages. The MMIC is realized in a 3.6/spl times/3.4 mm/sup 2/ area, consumes 530 mW, and is self-biased through a 6 V supply. This MMIC represents the highest complexity X-band down-converter MMIC demonstration based on GaAs HBT and Schottky technology.
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