B. Miller, M. Young, U. Koren, T. Koch, M. Oron, R. Gnall, J. Zucker, K. Jones, F. Hernández-Gil, J. L. deMiguel
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引用次数: 0
Abstract
It has been shown that bulk layers of InGaAs and InGaAsP grown using tertiarybutylarsine (TBA) have nearly as good electrical and optical properties as AsH/sub 3/-grown layers. As a consequence conventional InGaAsP lasers at 1.3 mu m were grown by TBA and were found to have properties as good as those of AsH/sub 3/ lasers. Investigations into other components of PIC circuits grown by using TBA as substitute for AsH/sub 3/ are presented. Studies of multi-quantum-well (MQW) and strained-layer MQW lasers, a four-port directional coupler optical switch, and quantum-confined Stark effect modulator structures grown by this technique are reported. The components are intended for use in photonic integrated circuits. In all cases satisfactory performance is demonstrated.<>
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