{"title":"A new SSS-OSELO technology for 0.15-/spl mu/m low-defect isolation","authors":"Y. Sudoh, T. Kaga, J. Yugami, T. Kure","doi":"10.1109/VLSIT.1995.520885","DOIUrl":null,"url":null,"abstract":"A new isolation with single-Si/sub 3/N/sub 4/-spacer (SSS) OSELO technology is proposed. The features of the SSS OSELO process are low bird's beak penetration and low defect isolation, which are achieved by using low defect-density etching for the Si/sub 3/N/sub 4/ spacer formation, and lower growth-rate and/or a high-temperature oxidation ambient. The SSS OSELO technology allows the 0.15-/spl mu/m low-defect isolation and the fabrication of 1-gigabit DRAM cells.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new isolation with single-Si/sub 3/N/sub 4/-spacer (SSS) OSELO technology is proposed. The features of the SSS OSELO process are low bird's beak penetration and low defect isolation, which are achieved by using low defect-density etching for the Si/sub 3/N/sub 4/ spacer formation, and lower growth-rate and/or a high-temperature oxidation ambient. The SSS OSELO technology allows the 0.15-/spl mu/m low-defect isolation and the fabrication of 1-gigabit DRAM cells.
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